Abstract: A plurality of different types of plasma sources are used to treat a substrate. The plasma sources may be associated with a single process chamber. In this case, the plasma sources are selectively operated for treating the substrate in the process chamber. Alternatively, the plasma sources may be respectively associated with respective process chambers in an integrated manufacturing facility. According to the present invention, the operating parameters, e.g., sequence of use, of the plasma sources constitute additional process parameters that can be adjusted maximizing the efficiency of the process.

Abstract: A DRAM device with increased surface area includes a pair of storage nodes arranged in a square configuration, and the square configurations are repeatedly arranged to form matrix cell array region. One of the storage node exhibits an “L” shaped pole and the other storage node exhibits a “reverse L” shaped pole. The “reverse L” shaped pole is rotated 180 degrees from the “L” shaped pole, thereby collectively forming a square configuration as viewed from a top plan view.

Abstract: A DRAM device with increased surface area includes a pair of storage nodes arranged in a square configuration, and the square configurations are repeatedly arranged to form matrix cell array region. One of the storage node exhibits an “L” shaped pole and the other storage node exhibits a “reverse L” shaped pole. The “reverse L” shaped pole is rotated 180 degrees from the “L” shaped pole, thereby collectively forming a square configuration as viewed from a top plan view.