Abstract: An organic light emitting diode display includes an emission control connector between a driving transistor and an organic light emitting diode of a pixel. The emission control connector connects the driving transistor and the organic light emitting diode and overlaps a portion of a repair line. A first shorting assistance member overlaps the repair line and the emission control connector, and serves to induce a chain reaction to allow a short to form between the repair line and the emission control connector when a low-energy laser beam is applied.

Abstract: A method of manufacturing a display device including providing a substrate, forming a semiconductor layer on the substrate, forming a first insulating layer on the semiconductor layer, forming a metal layer on the first insulating layer, forming a second insulating layer on the metal layer, forming an etching buffer layer on the second insulating layer, forming a photosensitive film pattern on the etching buffer layer, and etching the etching buffer layer and the first and second insulating layers to expose the semiconductor layer.

Abstract: An organic light emitting diode display includes an emission control connector between a driving transistor and an organic light emitting diode of a pixel. The emission control connector connects the driving transistor and the organic light emitting diode and overlaps a portion of a repair line. A first shorting assistance member overlaps the repair line and the emission control connector, and serves to induce a chain reaction to allow a short to form between the repair line and the emission control connector when a low-energy laser beam is applied.

Abstract: An adaptive body bias (ABB) circuit and a semiconductor integrated circuit (IC) having the ABB circuit include: a logic circuit performing logic calculations, a clock line through which a clock signal is transmitted to the logic circuit, and at least one bias line through which a bias voltage is applied to the logic circuit, wherein the bias voltage is applied to a body of a metal oxide semiconductor (MOS) transistor constituting the logic circuit, and the bias line is arranged at a predetermined distance from the clock line to shield the clock signal from crosstalk due to other adjacent signal lines.

Abstract: A method of manufacturing a display device including providing a substrate, forming a semiconductor layer on the substrate, forming a first insulating layer on the semiconductor layer, forming a metal layer on the first insulating layer, forming a second insulating layer on the metal layer, forming an etching buffer layer on the second insulating layer, forming a photosensitive film pattern on the etching buffer layer, and etching the etching buffer layer and the first and second insulating layers to expose the semiconductor layer.

Abstract: The function of logic cells may be changed by altering their metal routing. Logic cells altered in this manner may be used to correct, substitute, or otherwise alter the operation of logic blocks or scan paths without completely re-working an integrated circuit. The process may be referred to as an engineering change order (ECO) process. According to an exemplary process a buffer may be reconfigured to operate as a NAND gate, a NOR gate, or an INVERTER, for example, and may be configured to operate in a circuit in need of such a logic function.

Abstract: An integrated circuit device includes first and second latches (e.g, D-type flip flops) responsive to a clock signal. Each of the first and second latches respectively includes a data input terminal, a scan input terminal, a scan enable terminal and an output terminal. A combinational logic circuit may be provided, which is configured to receive the signal from the output terminal of the first latch and configured to generate a signal at the data input terminal of the second latch. A scan path is also provided, which is responsive to a scan enable signal. The scan path is configured to selectively pass a signal from the output terminal of the first latch to the scan input terminal of the second latch when the scan enable signal is active. A power saving switch is also provided. This switch, which is responsive to the scan enable signal, includes a first current carrying terminal electrically coupled to the scan path.

Abstract: The function of logic cells may be changed by altering their metal routing. Logic cells altered in this manner may be used to correct, substitute, or otherwise alter the operation of logic blocks or scan paths without completely re-working an integrated circuit. The process may be referred to as an engineering change order (ECO) process. According to an exemplary process a buffer may be reconfigured to operate as a NAND gate, a NOR gate, or an INVERTER, for example, and may be configured to operate in a circuit in need of such a logic function.

Abstract: An adaptive body bias (ABB) circuit and a semiconductor integrated circuit (IC) having the ABB circuit include: a logic circuit performing logic calculations, a clock line through which a clock signal is transmitted to the logic circuit, and at least one bias line through which a bias voltage is applied to the logic circuit, wherein the bias voltage is applied to a body of a metal oxide semiconductor (MOS) transistor constituting the logic circuit, and the bias line is arranged at a predetermined distance from the clock line to shield the clock signal from crosstalk due to other adjacent signal lines.

Abstract: Disclosed is a cache memory controlling method for reducing cache latency. The method includes sending a target address to a tag memory storing tag data and sending the target address to a second group data memory that has a latency larger than that of a first group data memory. The method further includes generating and outputting a cache signal that indicates whether the first group data memory includes target data and that indicates whether the second group data memory includes target data. The target address is sent to the second group data memory before the output of the cache signal. With an exemplary embodiment, cache latency is minimized or reduced, and the performance of a cache memory system is improved.

Abstract: An integrated circuit device includes first and second latches (e.g, D-type flip flops) responsive to a clock signal. Each of the first and second latches respectively includes a data input terminal, a scan input terminal, a scan enable terminal and an output terminal. A combinational logic circuit may be provided, which is configured to receive the signal from the output terminal of the first latch and configured to generate a signal at the data input terminal of the second latch. A scan path is also provided, which is responsive to a scan enable signal. The scan path is configured to selectively pass a signal from the output terminal of the first latch to the scan input terminal of the second latch when the scan enable signal is active. A power saving switch is also provided. This switch, which is responsive to the scan enable signal, includes a first current carrying terminal electrically coupled to the scan path.

Abstract: A semiconductor device comprises a plurality of flip-flops, a clock tree for transferring an externally input clock signal to the flip-flops, and a shield tree configured to shield the clock tree. The shield tree transmits a control signal to activate the flip-flops in a test operation mode of the semiconductor device.