Patents by Inventor Seok-Jin Yoon

Seok-Jin Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140241331
    Abstract: Disclosed is a message communication method of transmitting and receiving a certain message, independently of any network, without privacy invasion issues. The method includes generating vendor specific data on the basis of input information, adding the generated vendor specific data to a P2P information element of a probe request frame, and transmitting the probe request frame to another message communication apparatus. Thus, an apparatus conforming to a Wi-Fi Direct standard may transmit/receive a certain message to/from another terminal independently of a use region, a use environment, and a network of a large telecommunication vendor, without privacy invasion issues.
    Type: Application
    Filed: January 7, 2014
    Publication date: August 28, 2014
    Applicant: Electronics & Telecommunications Research Institute
    Inventors: Jin Suk Ma, Do Hyeung Kim, Cheol Ryu, Seok Jin Yoon, Min Hong Yun, Choong Bum Park, Jae Ho Lee, Hyung Seok Lee
  • Publication number: 20140217404
    Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.
    Type: Application
    Filed: April 11, 2014
    Publication date: August 7, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ho Won JANG, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ji Won CHOI, Hi Gyu MOON
  • Publication number: 20140210650
    Abstract: Disclosed herein are an apparatus and method for informing a bus driver of a user's intention to get on or off a bus. The apparatus for informing a bus driver of a user's intention to get on or off a bus includes a getting-on information collection device. The getting-on information collection device includes a getting-on information reception unit, an arrival-expected bus identification unit, and a transmission information transmission unit. The getting-on information reception unit receives getting-on information entered by a passenger who desires to get on a bus at a bus stop via a getting-on information transfer device of the bus stop. The arrival-expected bus identification unit identifies a bus expected to arrive having the earliest expected arrival time at the bus stop based on a bus number. The transmission information transmission unit transmits the transmission information to the getting-on information notification device of the bus expected to arrive.
    Type: Application
    Filed: August 2, 2013
    Publication date: July 31, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Do-Hyung KIM, Jae-Ho Lee, Choong-Bum Park, Jin-Suk Ma, Cheol Ryu, Seok-Jin Yoon, Hyung-Seok Lee
  • Patent number: 8785924
    Abstract: Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: July 22, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Ho Won Jang, Seok Jin Yoon, Jin Sang Kim, Chong Yun Kang, Ji Won Choi, Hi Gyu Moon
  • Patent number: 8658314
    Abstract: A cathode thin film for a lithium secondary cell, which uses a cathode active material substituting Sn for Mn in lithium manganese oxide, has a high discharge capacity and an improved cycle property.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: February 25, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Ji-Won Choi, Seok-Jin Yoon, Dong Wook Shin
  • Publication number: 20130334930
    Abstract: Provided are a method of manufacturing a flexible piezoelectric energy harvesting device using a piezoelectric composite, and a flexible piezoelectric energy harvesting device manufactured by the same. The method of manufacturing the flexible piezoelectric energy harvesting device includes: forming a first electrode layer on a first flexible substrate; spin-coating a piezoelectric composite layer on the first electrode layer, wherein the piezoelectric composite layer is produced by mixing piezoelectric powder with polymer; performing heat treatment on the piezoelectric composite layer to harden the piezoelectric composite layer; and bonding a second flexible substrate with a second electrode layer on the hardened piezoelectric composite layer. Therefore, it is possible to simplify a manufacturing process and manufacture a high-performance flexible piezoelectric energy harvesting device having various sizes and patterns.
    Type: Application
    Filed: October 30, 2012
    Publication date: December 19, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chong Yun KANG, Seok Jin YOON, Young Ho DO, Ji Won CHOI, Hyun Cheol SONG, Seung Hyub BAEK, Jin Sang KIM
  • Publication number: 20130334522
    Abstract: Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.
    Type: Application
    Filed: December 13, 2012
    Publication date: December 19, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chong Yun Kang, Seok Jin Yoon, Young Ho Do, Ji Won Choi, Seung Hyub Baek, Hyun Cheol Song, Jin Sang Kim
  • Publication number: 20130316097
    Abstract: A cathode thin film for a lithium secondary cell, which uses a cathode active material substituting Sn for Mn in lithium manganese oxide, has a high discharge capacity and an improved cycle property.
    Type: Application
    Filed: August 6, 2013
    Publication date: November 28, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji-Won CHOI, Seok-Jin YOON, Dong Wook SHIN
  • Publication number: 20130314842
    Abstract: Provided are a thin film condenser for high-density packaging, a method for manufacturing the same and a high-density package substrate. The thin film condenser for high-density packaging, includes: a support substrate; a lower electrode formed on the support substrate; a dielectric thin film formed on the lower electrode; and an upper electrode formed on the dielectric thin film. Provided also is a method for manufacturing the same. The high-density package substrate, includes: at least two stacked substrates; thin film condensers embedded in the stacked substrates; an internal connection electrode formed in the stacked substrates and connecting the thin film condensers in series or in parallel; a surface electrode formed on the surface of the outermost substrate among the stacked substrates and connected to the internal connection electrode; and an integrated circuit connected to the surface electrode via a bump.
    Type: Application
    Filed: November 15, 2012
    Publication date: November 28, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chong Yun KANG, Min Gyu KANG, Seok Jin YOON, Ji Won CHOI, Seung Hyub BAEK, Jin Sang KIM
  • Publication number: 20130146865
    Abstract: Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.
    Type: Application
    Filed: July 6, 2012
    Publication date: June 13, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ho Won JANG, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ji Won CHOI, Hi Gyu MOON
  • Publication number: 20120298008
    Abstract: Provided are a dielectric thin film and a method for manufacturing the same. The dielectric thin film has a composition represented by the formula of TaxMg1-xO, wherein 0.082?x?0.89. The dielectric thin film provides excellent dielectric characteristics. Particularly, the dielectric thin film provides a high relative permittivity as well as low dielectric loss and leakage current, although it is formed (deposited) at a low temperature of 350° C. or lower (between room temperature and 350° C.).
    Type: Application
    Filed: July 25, 2011
    Publication date: November 29, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Won CHOI, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ho Won JANG, Yun Hoe KIM
  • Publication number: 20120211355
    Abstract: Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10?3 ?·cm and a high light transmittance of at least 90% even when deposition is carried out at room temperature. AlxZn1-xO In the above formula, x is within the range of 0.04?x?0.063.
    Type: Application
    Filed: April 11, 2011
    Publication date: August 23, 2012
    Applicant: Korea Institute of Science & Technology
    Inventors: Ji Won CHOI, Seok Jin Yoon, Won Kook Choi, Jin Sang Kim, Chong Yun Kang, Ho Won Jang, Keun Jung
  • Publication number: 20120124400
    Abstract: Disclosed is a terminal device for controlling connection between terminals by using low speed network communication. The terminal device includes a first transmission/reception unit for making a request for connection information required for high speed data communication with a connection terminal, to which the terminal device desires to connect, and receiving the connection information from the connection terminal, a network controller for determining a high speed network module to be used for high speed data communication with the connection terminal based on the connection information, and a second transmission/reception unit for performing high speed data communication with the connection terminal by using a high speed network module determined by the network controller.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 17, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventor: Seok Jin YOON
  • Patent number: 8030237
    Abstract: The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
    Type: Grant
    Filed: August 6, 2009
    Date of Patent: October 4, 2011
    Assignee: Korea Institute of Science and Technology
    Inventors: Ji-Won Choi, Won Kook Choi, Seok-Jin Yoon
  • Patent number: 8013496
    Abstract: The present invention relates to a piezoelectric linear motor that can make relatively low abrasion and accurate linear movement since stationary AC voltages are applied to two piezoelectric elements with a phase difference. The present invention provides a piezoelectric linear motor, comprising: a piezoelectric substrate having a first piezoelectric element and a second piezoelectric element, wherein AC voltages are applied to the first and second piezoelectric elements with a phase difference; a metallic elastic body having first and second elastic bodies coupled to the piezoelectric elements and a central protrusion protruded at the central portion connecting the first and second elastic bodies, wherein the central protrusion oscillates elliptically during an application of the voltage; and a mover brought into contact with the central protrusion of the metallic elastic body for a linear movement, and wherein the movement of the mover is orthogonal to the central protrusion.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: September 6, 2011
    Assignee: Korea Institute of Science and Technology
    Inventors: Chong Yun Kang, Seok Jin Yoon, Dae Yong Jeong, Hyun Jai Kim, Piotr Vasiljev, Ji Won Choi
  • Publication number: 20110212323
    Abstract: The present invention relates to a method for preparing oxide thin films with high sensitivity and reliability, which can be advantageously used in the fabrication of articles such as gas sensors. The present invention establishes a high reliability process for preparing large area microsphere templates which may be applicable to silicone semiconductor processes by simple plasma surface treatment and spin coating. The present invention achieves remarkably enhanced sensitivities of thin films of gas sensors by controlling the nanostructure shapes of hollow hemisphere oxide thin films by using simple plasma treatment. In particular, the gas sensor based on the nanostructured TiO2 hollow hemisphere according to the present invention exhibits higher sensitivity, faster response and recovery speed to CO gas over conventional TiO2 gas sensors.
    Type: Application
    Filed: September 1, 2010
    Publication date: September 1, 2011
    Inventors: Ho Won Jang, Seok-Jin Yoon, Jin Sang Kim, Chong Yun Kang, Ji-Won Choi, Hi Gyu Moon
  • Patent number: 7895575
    Abstract: Provided are an apparatus and method for generating a test driver, capable of reducing errors caused in component development early on by enabling immediate checking as to whether architecture design requirements are satisfied during component development. Specific snapshot information is input to the interface for the individual component of the architecture model to extract a state variable storing the state information of the component. An interface that sets and checks the state variable is then added to enable unit testing for the component to proceed smoothly. Using an interface giving access to the state variable, a test preparation code setting a test environment and a test check code checking whether the state variable after interfacing reaches a proper state are generated, thereby automatically generating a test driver code.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: February 22, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seok Jin Yoon, Gyu Sang Shin
  • Publication number: 20100330298
    Abstract: A method for fabricating a ferroelectric ceramic film. The method includes coating a gel film on a substrate. The gel film has at least one ferroelectric material and at least one ultra-violet (UV) sensitive material. The method further includes simultaneously heating the gel film and irradiating a UV ray onto the gel film transforming the gel film into an amorphous ferroelectric film made of the at least one ferroelectric material. The above heating may be performed by using a rapid thermal processing technique.
    Type: Application
    Filed: June 30, 2009
    Publication date: December 30, 2010
    Inventors: Chong Yun Kang, Kwang Hwan Cho, Seok-Jin Yoon, Min Gyu Kang
  • Publication number: 20100084947
    Abstract: The present invention relates to a piezoelectric energy harvester having a high energy transformation efficiency and a low natural frequency. The piezoelectric energy harvester includes an elastic substrate having a spiral spring structure, a first electrode formed on the elastomeric substrate, a piezoelectric film formed on the first electrode and a second electrode formed on the piezoelectric film.
    Type: Application
    Filed: October 1, 2009
    Publication date: April 8, 2010
    Inventors: Seok-Jin YOON, Hyun Cheol SONG, Chong Yun KANG, Jin Sang KIM
  • Publication number: 20100035749
    Abstract: The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
    Type: Application
    Filed: August 6, 2009
    Publication date: February 11, 2010
    Inventors: Ji-Won Choi, Won Kook Choi, Seok-Jin Yoon