Abstract: An active geometry control suspension may reduce production cost with simple scheme and provide design freedom. An active geometry control suspension of the present invention includes an assist link including a first link of which an end is rotatably connected to a vehicle body and a second link of which an end is connected to the first link and the other end is rotatably connected to a wheel, a clutch assembly selectively connecting a connecting portion of the first link and the second link to the vehicle body and a driving unit operating the clutch assembly.

Abstract: A circuit for providing a voltage, which includes a first voltage generating circuit to output a first voltage generated by dividing an input voltage on the basis of resistance rate varied in accordance with a first control signal, a second voltage generating circuit to output a third voltage by using a second voltage, where the third voltage is shifted in accordance with a temperature, a third voltage generating circuit to change the third voltage by using a voltage shift rate set in accordance with a level of an operation voltage to be outputted at the temperature, thereby outputting a fourth voltage, and a comparison amplifying circuit configured to output the operation voltage in accordance with the first voltage, the fourth voltage and resistance rate.

Abstract: A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.

Abstract: A high voltage generator includes a charge pump configured to output a pumping voltage in accordance with a first clock signal and a second clock signal having a level opposed to a level of the first clock signal; a first regulator configured to stabilize the pumping voltage to a voltage having constant level, thereby outputting a first regulation voltage; and a second regulator configured to convert the first regulation voltage into a voltage having constant level, thereby outputting a second regulation voltage. Here, the first regulator increases the pumping voltage by n number so that the first regulation voltage reaches a first level, and the second regulator increases the first regulation voltage by m number so the second regulation voltage reaches a second level smaller than the first level.

Abstract: A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.

Abstract: A regulator included in a high voltage generator for supplying a high voltage to a semiconductor memory device is disclosed. The regulator includes a voltage dividing circuit configured to divide an output voltage of a charge pump, a comparing circuit configured to compare a reference voltage with a divided voltage by the voltage dividing circuit, a regulator driving circuit configured to couple selectively the voltage dividing circuit to a ground, and a high voltage discharging circuit configured to discharge the divided voltage applied to the comparing circuit when supply of a power supply voltage is stopped.

Abstract: A high voltage generator includes a charge pump configured to output a pumping voltage in accordance with a first clock signal and a second clock signal having a level opposed to a level of the first clock signal; a first regulator configured to stabilize the pumping voltage to a voltage having constant level, thereby outputting a first regulation voltage; and a second regulator configured to convert the first regulation voltage into a voltage having constant level, thereby outputting a second regulation voltage. Here, the first regulator increases the pumping voltage by n number so that the first regulation voltage reaches a first level, and the second regulator increases the first regulation voltage by m number so the second regulation voltage reaches a second level smaller than the first level.

Abstract: A flash memory device applies a low read voltage at increased flash memory device temperatures. A high read voltage is applied when a supply voltage is high, thereby maintaining a stable threshold voltage margin of a programmed cell or an erased cell. As a result, the reliability of the flash memory cell is enhanced.

Abstract: A flash memory device applies a low read voltage at increased flash memory device temperatures. A high read voltage is applied when a supply voltage is high, thereby maintaining a stable threshold voltage margin of a programmed cell or an erased cell. As a result, the reliability of the flash memory cell is enhanced.

Abstract: A high-voltage switching circuit comprises: a high-voltage switch configured to transfer a high voltage; a pumping circuit configured to boost signals of first, second, and third nodes by conducting pumping operations in response to a plurality of clock signals; and a drive signal transmission circuit configured to boost the signal of the second node at a constant rate while maintaining a voltage level of the third node regardless of variation of a voltage level at the first node and transfer the boosted signal of the second node to the high-voltage switch, activating the high-voltage switch.

Abstract: A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.

Abstract: An oscillator circuit for a semiconductor device is disclosed which can generate internal clocks having a stable period regardless of variations of a process of transistors and resistors, a power voltage and a temperature, by controlling an oscillator unit by separating a gate voltage and a reference voltage, and which can normally operate chip functions according to the stable internal clocks without suffering from large variations by external factors.

Abstract: A coating composition for forming insulating films, a non-oriented electrical steel sheet with the coating composition coated thereon, and a method for forming the insulating films on the steel sheet, are disclosed. The coating composition includes the following ingredients for each 100 g of phosphoric acid of a primary aluminum phosphate solution. The coating composition comprises 28-98 g (solid weight) of an acid-soluble emulsion type acrylic-styrenic copolymer resin, 6-18 g of zinc nitrate, 4-13 g of a silicon additive, 18-35 g of ethylene glycol, and 3-11 g of non-ionic surfactant. The non-oriented electrical steel sheet is coated with the above coating composition. The coating composition is superior in roll coating workability and in film characteristics, and further, it is environmentally friendly and has superior aesthetics.