Abstract: Disclosed is a method for manufacturing a bipolar transistor. The method includes the steps of forming a well area, which is doped with a first conductive type material, on a semiconductor substrate, forming a base area, which is doped with the first conductive type material, by performing an ion implantation process with respect to the well area, forming an emitter area and a collector area, which are doped with a second conductive type material, by performing an ion implantation process with respect to the well area formed with the base area, and forming a silicide layer on an upper part of the semiconductor substrate except for the emitter area and the collector area.