Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.

Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes irradiating a laser into a substrate having a first surface and a second surface opposing each other to form at least one laser irradiation area on the substrate. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on the substrate. The light emitting structure and the substrate is cut in a position corresponding to the laser irradiation area of the substrate, in a top surface of the light emitting structure, to separate the light emitting structure and the substrate into individual device units.

Abstract: A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.

Abstract: A light emitting device package includes: a substrate with a mounting surface; a light emitting device bonded to the mounting surface of the substrate; a light reflecting resin part containing a high reflective material, filled on the substrate around the light emitting device so as to extend in a space between the light emitting device and the substrate; and a packing resin part hermetically sealed to cover the light emitting device and the light reflection resin part.

Abstract: A mobile terminal capable of receiving mobile broadcast services and a channel control method for the same are provided. The channel control method includes outputting broadcast data present in a frame received on a current channel during a frame transport interval, scanning, during a sleep interval after the frame transport interval, for at least one frequency corresponding to a preset preference channel, extracting channel information by parsing a frame carried by the scanned frequency, and storing the extracted channel information while updating existing channel information. Hence, the channel search time experienced by the user for viewing channel information may be shortened.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

Abstract: Provided are an apparatus and a method for receiving PSI/SI in a DVB-H receiver, in which packets carrying PSI/SI are detected from TS packets received over a wireless network and counted, and the PSI/SI packets are read if the packet count number reaches a predetermined packet number.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.

Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Abstract: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in

Abstract: A light emitting device package includes: a substrate with a mounting surface; a light emitting device bonded to the mounting surface of the substrate; a light reflecting resin part containing a high reflective material, filled on the substrate around the light emitting device so as to extend in a space between the light emitting device and the substrate; and a packing resin part hermetically sealed to cover the light emitting device and the light reflection resin part.

Abstract: A user terminal and method are provided for receiving broadcast data based on frames. A determination is made whether the broadcast data is transmitted via a primary RS frame for transmitting first broadcast data or a secondary RS frame for transmitting second broadcast data. When the broadcast data is transmitted via the secondary RS frame for the second broadcast data, a channel state of a channel through which a frame containing the second broadcast data is transmitted is checked. When the checked channel state is greater than or equal to a preset first channel state, only the second broadcast data contained in the secondary RS frame is received. Therefore, the user terminal can periodically receive frames containing its necessary broadcast data and can thus reduce power consumption.

Abstract: A mobile terminal capable of receiving mobile broadcast services and a channel control method for the same are provided. The channel control method includes outputting broadcast data present in a frame received on a current channel during a frame transport interval, scanning, during a sleep interval after the frame transport interval, for at least one frequency corresponding to a preset preference channel, extracting channel information by parsing a frame carried by the scanned frequency, and storing the extracted channel information while updating existing channel information. Hence, the channel search time experienced by the user for viewing channel information may be shortened.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

Abstract: An apparatus and method for transmitting and receiving broadcasting information transmission in a Digital Video Broadcasting (DVB) system are provided. The method for transmitting broadcasting information includes dividing a Program Specific Information (PSI) and/or Service Information (SI) table received from an upper layer into a plurality of sections, generating section numbers with respect to the sections, channel-coding and interleaving the sections, generating a Transport Stream (TS) packet including at least one section, section information and channel coding information, and multiplexing the TS packet together with a data TS packet.