Abstract: The present disclosure relates to an organometallic compound having the following structure of Chemical Formula 1, Ir(LA)m(LB)n, an organic light emitting diode (OLED) where the organometallic compound is applied to an emitting material layer and an organic light emitting device. The luminous efficiency, color purity and luminous lifespan of the OLED and the organic light emitting device can be improved.

Abstract: The present invention relates to a carbon-silicon composite and a preparation method therefor. An aspect of the present invention provides a carbon-silicon composite comprising: a core including a carbon material and silicon particles; and a shell which is formed on the surface of the core and includes amorphous carbon, wherein the silicon particles are uniformly distributed from the center to the surface of the core.

Abstract: A display device according to an embodiment includes: a first wiring layer disposed on a substrate; a first insulating layer disposed on the first wiring layer and including an inorganic material; a second insulating layer disposed on the first insulating layer, and including an organic material; and a second wiring layer disposed on the second insulating layer and electrically connected to the first wiring layer through a contact hole of the first insulating layer and the second insulating layer. A thickness of the second insulating layer is greater than a thickness of the first insulating layer. The contact hole includes a first sub-contact hole formed in the first insulating layer and a second sub-contact hole formed in the second insulating layer. At least part of at least one edge of the first sub-contact hole is covered with the second insulating layer.

Abstract: The present invention includes a position restriction structure disposed in a space between an auxiliary cover casing and a diaphragm spring and having a body part fixed to the auxiliary cover casing, a mounting part extending in a circumferential direction from the body part and coupled to the auxiliary cover casing, a first protrusion protruding in an axial direction from the body part toward an incision groove of the diaphragm spring and inserted into the incision groove to restrict movement in the radial direction and a second protrusion protruding in the axial direction from the body part toward the incision groove of the diaphragm spring and inserted into the incision groove to restrict movement in the rotational direction. The position restriction structure is installed on the auxiliary cover casing and restrains the movement in the radial and rotational directions of the diaphragm spring.

Abstract: An optical sheet and a method for manufacturing the optical sheet are provided.

Abstract: An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.

Abstract: The present invention relates to an anode active material, a preparation method therefor, and a lithium secondary battery comprising same. An anode active material according to one aspect of the present invention comprises a carbon material and silicon particles, wherein the carbon material encompasses, inside bulk particles, the silicon particles and a method for preparing the anode active material, according to another aspect, comprises the steps of: preparing a mixture powder by mixing a carbon material and silicon particles; and mechanically over-mixing the mixture powder.

Abstract: The present invention includes a position restriction structure disposed in a space between an auxiliary cover casing and a diaphragm spring and having a body part fixed to the auxiliary cover casing, a mounting part extending in a circumferential direction from the body part and coupled to the auxiliary cover casing, a first protrusion protruding in an axial direction from the body part toward an incision groove of the diaphragm spring and inserted into the incision groove to restrict flow in the radial direction and a second protrusion protruding in the axial direction from the body part toward the incision groove of the diaphragm spring and inserted into the incision groove to restriction flow in the rotational direction. The position restriction structure is installed on the auxiliary cover casing and restrains the flow in the radial and rotational directions of the diaphragm spring.

Abstract: A double clutch assembly has a diaphragm spring aligned and maintained to prevent uneven wear of a disc. A diaphragm spring is deformable in an axis direction with respect to a cover casing which receives a driving force from an engine. A center plate is connected to the cover casing and an auxiliary cover casing is coupled to the center plate to form a support point. The pressure plate is selectively connected to a center plate disc when the diaphragm spring contracts. An auxiliary pressure plate is coupled to the center plate. A disc installed between the center plate and the pressure plate provides the driving force transmitted through the pressure plate to the transmission. An auxiliary disc installed between the center plate and the auxiliary pressure plate provides the driving force through the auxiliary pressure plate to the transmission.

Abstract: An embodiment provides: a method for manufacturing a silicon carbide epi wafer, the method comprising the steps of preparing a wafer, applying a reaction gas to the wafer, heating the reaction gas to generate an intermediate compound, and forming a silicon carbide epi layer on the wafer using the generated intermediate compound, wherein the reaction gas contains a plurality of hydrocarbon compounds; and a silicon carbide epi wafer comprising a silicon carbide epi layer formed by a reaction gas containing a plurality of hydrocarbon compounds, wherein the C/Si value of the silicon carbide epi layer is uniform on the wafer, and thus the uniformity of the silicon carbide epi layer on the wafer can be improved.

Abstract: Provided are an epitaxial wafer and a method of fabricating the same. The method includes a pre-growth step of injecting a reaction source for epitaxial growth on a semiconductor wafer prepared in a chamber and growing an epitaxial layer by a predetermined first thickness at a predetermined first growth rate and at a predetermined first growth temperature, a heat treatment step of performing heat treatment on the epitaxial layer grown by the pre-growth step during a predetermined time, and a subsequent growth step of injecting the reaction source on the heat-treated semiconductor wafer and growing the epitaxial layer to a target thickness at a predetermined second growth rate and at a predetermined second growth temperature. The first growth rate is smaller than the second growth rate.

Abstract: An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.

Abstract: In a method of inspecting a surface of a substrate, a first surface image of the substrate before loaded into a process chamber may be obtained. The first surface image may be processed to detect a defect on the surface of the substrate. Thus, the surfaces of all of the substrate may be inspected during a process may be performed without transferring the substrates.

Abstract: A method of fabricating a wafer according to the embodiment comprises the steps of growing an wafer on a surface of the wafer in a growth temperature; and cooling the wafer after the wafer has been grown, wherein a stepwise cooling is performed when cooling the wafer.

Abstract: An embodiment provides: a method for manufacturing a silicon carbide epi wafer, the method comprising the steps of preparing a wafer, applying a reaction gas to the wafer, heating the reaction gas to generate an intermediate compound, and forming a silicon carbide epi layer on the wafer using the generated intermediate compound, wherein the reaction gas contains a plurality of hydrocarbon compounds; and a silicon carbide epi wafer comprising a silicon carbide epi layer formed by a reaction gas containing a plurality of hydrocarbon compounds, wherein the C/Si value of the silicon carbide epi layer is uniform on the wafer, and thus the uniformity of the silicon carbide epi layer on the wafer can be improved.

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract: According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer includes supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, there is provided a silicon carbide epitaxial wafer which includes a silicon carbide wafer; and a silicon carbide epitaxial layer on the silicon carbide wafer wherein a surface defect formed on the silicon carbide epitaxial layer is 1 ea/cm2 or less.

Abstract: A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part.

Abstract: An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.

Abstract: A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas into the susceptor; producing an intermediate compound by introducing a reactive raw material into the susceptor; and forming a silicon carbide epitaxial layer on the wafer by reacting the intermediate compound with the wafer.