Abstract: A solar cell mode and a method for manufacturing the same are disclosed. The solar battery module in accordance with the present invention includes a plurality of solar cells arranged in row and column directions; and a conductive ribbon electrically connecting the plurality of solar cells, wherein each of the solar cells has a structure in which a first photoelectric element including a polycrystalline semiconductor layer and a second photoelectric element including an amorphous semiconductor layer are stacked.

Abstract: A solar cell and a manufacturing method thereof are disclosed. The solar cell in accordance with the present invention includes a substrate 100; a lower electrode 111a formed on the substrate 100; a photoelectric element unit 200a including a polycrystalline photoelectric element 210 formed on the lower electrode 111a and formed by stacking a plurality of polycrystalline semiconductor layers 211a, 212a, and 213a, and a amorphous photoelectric element 220 formed on the polycrystalline photoelectric element 210 and formed by stacking a plurality of amorphous semiconductor layers 221, 222, and 223; and an upper electrode 400 formed on the photoelectric element unit 200a.

Abstract: A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on. The method for fabricating the semiconductor device includes the steps of: forming a transistor included in the semiconductor device on a semi conductor substrate forming an insulating layer on the transistor; forming contact holes, through which a region of the transistor is exposed, by selectively removing the insulating layer forming a silicon layer in the contact holes forming a metal layer on the insulating layer and the silicon layer; forming a metal suicide layer through heat treatment of the silicon layer and the metal layer; removing the metal layer; forming an amorphous silicon layer on the insulating layer and the metal suicide layer; and forming a polysilicon layer through heat treatment of the amorphous silicon layer.

Abstract: A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on.

Abstract: The present invention generally relates to a liquid crystal panel using a thin film transistor and a manufacturing method thereof, and more specifically to a liquid crystal panel using a thin film transistor and a manufacturing method thereof for improving an opening ratio by forming a storage capacitor under a channel. The present invention has suggested a method for effectively contacting an upper electrode for forming a capacitor with a lower electrode since the storage capacitor is located under the channel. Compared to a prior art in which one of storage capacitor electrodes is formed side by side with a channel of a thin film transistor, capacitor electrodes formed according to the present invention are located near to a substrate, thereby forming contact electrodes in many times without forming them one time.

Abstract: Method for fabricating a liquid crystal display (LCD) suitable for enhancing its aperture ratio is disclosed, including the steps of forming a plurality of semiconductor layers on predetermined areas of a substrate and forming a first insulating layer on the entire surface of the substrate including the semiconductor layers, forming a plurality of gate lines on the first insulating layers to selectively overlap the semiconductor layers and implanting impurity ions into the semiconductor layers by using the gate lines as masks so as to form source and drain regions, forming a second insulating layer on the entire surface of the substrate including the gate lines and patterning the second insulating layer to expose a portion of each of the gate lines, forming a transparent conductive layer on the entire surface of the substrate including the gate lines and patterning the transparent conductive layer to form a storage electrode on the second insulating layer over each of pixel regions in contact with the exposed

Abstract: Liquid crystal display which increases a numerical aperture, and a method for fabricating the same are disclosed, the liquid crystal display including a plurality of semiconductor layers each formed in a pixel region on a substrate, each of semiconductor layers connected with a data line, and each of semiconductor layers having a source region and a drain region, a common electrode line formed on each semiconductor layer to overlap the semiconductor layer, and a pixel electrode formed in the pixel region excluding the gate line, the date line, and the common electrode in contact with the semiconductor layer.

Abstract: A liquid crystal display apparatus and a manufacturing method thereof is disclosed, including a storage capacitor part being comprised of a lower storage electrode formed on the same base material as the above, first and second insulation films for isolating the lower storage electrode from a upper storage electrode, an upper storage electrode formed by patterning conductive material deposited on the second insulation film, a third insulation film for isolating the upper storage electrode from the upper structure, and a pixel electrode at the upper side of the third insulation film, thereby providing the required capacitance with the reduced area of the storage capacitance part so as to enhance the brightness of the liquid crystal display apparatus and improve image quality by increasing pixel numbers without the reduction of the brightness.