Patents by Inventor Seok-Soon Song

Seok-Soon Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor devices having buried contact plugs
    Patent number: 7749834
    Abstract: A method includes forming a lower dielectric layer on a semiconductor substrate, forming a bit line landing pad and a storage landing pad that penetrate the lower dielectric layer, covering the lower dielectric layer, the bit line landing pad, and the storage landing pad with an intermediate dielectric layer, forming an upper dielectric layer on the intermediate dielectric layer, partially removing the upper dielectric layer and the intermediate dielectric layer to form a contact opening that exposes the storage landing pad and a portion of the lower dielectric layer, forming a contact spacer on an inner wall of the contact opening, and filling the contact opening with a contact plug, a top surface of the contact plug larger than a surface of the contact plug that is in contact with the storage landing pad, the top surface of the contact plug eccentric in relation to the storage landing pad.
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: July 6, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je-Min Park, Yoo-Sang Hwang, Seok-Soon Song
  • Method of fabricating semiconductor devices having buried contact plugs
    Publication number: 20060205141
    Abstract: A method includes forming a lower dielectric layer on a semiconductor substrate, forming a bit line landing pad and a storage landing pad that penetrate the lower dielectric layer, covering the lower dielectric layer, the bit line landing pad, and the storage landing pad with an intermediate dielectric layer, forming an upper dielectric layer on the intermediate dielectric layer, partially removing the upper dielectric layer and the intermediate dielectric layer to form a contact opening that exposes the storage landing pad and a portion of the lower dielectric layer, forming a contact spacer on an inner wall of the contact opening, and filling the contact opening with a contact plug, a top surface of the contact plug larger than a surface of the contact plug that is in contact with the storage landing pad, the top surface of the contact plug eccentric in relation to the storage landing pad.
    Type: Application
    Filed: February 27, 2006
    Publication date: September 14, 2006
    Inventors: Je-Min Park, Yoo-Sang Hwang, Seok-Soon Song