Patents by Inventor Seok-yeol Yoon

Seok-yeol Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MNOS-type memory using single electron transistor and driving method thereof
    Patent number: 6313503
    Abstract: A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (&Dgr;Vth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (&Dgr;Vth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate.
    Type: Grant
    Filed: June 22, 2000
    Date of Patent: November 6, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jo-won Lee, Moon-kyung Kim, Byong-man Kim, Seok-yeol Yoon, Hyung-lae Roh