Abstract: A display panel includes an upper substrate to which external light is incident, a sealing member which is in a non-display area and couples the upper substrate to a lower display substrate. The upper display substrate includes: a base substrate; a light shielding layer and filter layer each corresponding to the non-display area and absorbing a portion of external light which is transmitted through the base substrate at the non-display area, the filter layer and the light shielding layer having different colors from each other. In a first non-display area of the base substrate which corresponds to the sealing member, only one among the filter layer and the light shielding layer is disposed. In a second non-display area of the base substrate which is adjacent to the first non-display area, both the filter layer and the light shielding layer are disposed.

Abstract: A display apparatus includes a display panel including a plurality of pixels, and a cover panel including a window layer, an optical filter layer, a color filter layer and a bezel layer. The window layer includes a transmission region and a bezel region adjacent to the transmission region. The optical filter layer is disposed on the transmission region of the rear surface of the window layer. The color filter layer is disposed on the optical filter layer and includes a quantum dot. The bezel layer is disposed on the bezel region of the rear surface. The optical filter layer includes a partition wall layer, in which an opening is defined, a light-blocking layer disposed on the partition wall layer, and a reflection layer disposed in the opening. The bezel layer has a same color as the light-blocking layer.

Abstract: An electronic device package includes: a board including first surface and a second surface facing away from each other, and including a first layer adjacent to the first surface and a second layer adjacent to the second surface, wherein a step portion is formed on a side surface between the first layer and the second layer; an electronic device mounted on the first surface; an antenna layer formed in the second layer or on the second surface; a molded portion formed to cover the electronic device on the first surface; and a conductive film formed to cover a surface of the molded portion and a side surface of the first layer, and including an end portion positioned at the step portion.

Abstract: An electronic device module includes: a substrate; a sealing portion disposed on a first surface of the substrate; an exothermic device disposed on the first surface of the substrate and embedded in the sealing portion; and a heat radiating portion at least partially embedded in the sealing portion. A lower surface of the heat radiating portion is bonded to one surface of the exothermic device. A side surface of the heat radiating portion is curved and is entirely in contact with the sealing portion. A plurality of grooves are disposed in the side surface of the heat radiating portion.

Abstract: An electronic device module includes: a substrate; a sealing portion disposed on a first surface of the substrate; an exothermic device disposed on the first surface of the substrate and embedded in the sealing portion; and a heat radiating portion at least partially embedded in the sealing portion. A lower surface of the heat radiating portion is bonded to one surface of the exothermic device. A side surface of the heat radiating portion is curved and is entirely in contact with the sealing portion. A plurality of grooves are disposed in the side surface of the heat radiating portion.

Abstract: An electronic device package includes: a board including first surface and a second surface facing away from each other, and including a first layer adjacent to the first surface and a second layer adjacent to the second surface, wherein a step portion is formed on a side surface between the first layer and the second layer; an electronic device mounted on the first surface; an antenna layer formed in the second layer or on the second surface; a molded portion formed to cover the electronic device on the first surface; and a conductive film formed to cover a surface of the molded portion and a side surface of the first layer, and including an end portion positioned at the step portion.

Abstract: An electronic device module includes: a substrate; at least one electronic device mounted on a first surface of the substrate; a shielding wall mounted on the first surface of the substrate; a sealing portion disposed on the first surface of the substrate such that the at least one electronic device and the shielding wall are embedded in the sealing portion; and a shielding layer disposed on one surface of the sealing portion. At least a portion of the sealing portion is disposed externally of the shielding wall. The shielding wall and the shielding layer are formed of different materials.

Abstract: A flip chip package and a manufacturing method thereof are disclosed. The flip chip package in accordance with an embodiment of the present invention includes: a substrate; a plurality of pads formed on the substrate; a solder resist covering the substrate in such a way that the pads are exposed; a chip mounted on the substrate in such a way that the chip is electrically connected with the pads; a plurality of bumps formed, respectively, on the pads in such a way that the bumps are interposed between the pads and the chip; an under-fill flowing between the substrate and the chip and being filled in between the substrate and the chip; and an opening placed in between the plurality of bumps in such a way that a flowing space of the under-fill is provided in between the plurality of bumps.

Abstract: A flip chip package and a manufacturing method thereof are disclosed. The flip chip package in accordance with an embodiment of the present invention includes: a substrate; a plurality of pads formed on the substrate; a solder resist covering the substrate in such a way that the pads are exposed; a chip mounted on the substrate in such a way that the chip is electrically connected with the pads; a plurality of bumps formed, respectively, on the pads in such a way that the bumps are interposed between the pads and the chip; an under-fill flowing between the substrate and the chip and being filled in between the substrate and the chip; and an opening placed in between the plurality of bumps in such a way that a flowing space of the under-fill is provided in between the plurality of bumps.

Abstract: A flip chip package and a manufacturing method thereof are disclosed. The flip chip package in accordance with an embodiment of the present invention includes: a substrate; a plurality of pads formed on the substrate; a solder resist covering the substrate in such a way that the pads are exposed; a chip mounted on the substrate in such a way that the chip is electrically connected with the pads; a plurality of bumps formed, respectively, on the pads in such a way that the bumps are interposed between the pads and the chip; an under-fill flowing between the substrate and the chip and being filled in between the substrate and the chip; and an opening placed in between the plurality of bumps in such a way that a flowing space of the under-fill is provided in between the plurality of bumps.

Abstract: The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

Abstract: Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.

Abstract: The present invention relates to a nitride semiconductor device One aspect of the present invention provides a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers.

Abstract: There is provided a printed circuit board including: a core substrate; a solder mask selectively covering one surface of the core substrate; an open region of the solder mask including a portion of a surface of the core substrate and partitioned by the solder mask; a ball land formed on the open region of the solder mask; and a barrier formed between the ball land and the solder mask.

Abstract: Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.

Abstract: Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.

Abstract: The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

Abstract: The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers is provided. Further, a method of manufacturing a nitride semiconductor device is provided.