Abstract: A bronchoscopy simulator includes: a main body part which is formed to be similar to the bronchial tree of the human body; and a bleeding producing part which is provided on the main body part to create a situation where bleeding occurs bronchial tree inside the main body part, thereby enabling practice of a response process for bleeding situations occurring during bronchoscopy. A control method for the bronchoscope simulator, includes: a bleeding occurrence step in which bleeding occurs inside a main body part by a bleeding simulation part; and a bleeding stop step, after hemostasis responding to the bleeding is performed, in which the bleeding is stopped by the bleeding simulation part.

Abstract: A manufacturing method of a bronchoscopy simulator, includes: a base part printing step in which a base part is printed by a 3D printer; a plastic dipping step in which plastic dipping is applied to the outside of the base part; a through-hole forming step in which a through-hole is formed in the base part; and a liquid passing step in which liquid passes through the through-hole to melt away only the base part while leaving the plastic dipping intact.

Abstract: A conductive particle to be dispersed in a resin composition of an anisotropic connection material containing binder resin and solvent, the conductive particle includes: a core, a conductive layer provided on the core and containing metal, insulating fine particles connected by a first substituent that binds to the metal of the conductive layer, provided on a first region of the conductive layer, and a hydrophobic surface treatment layer connected by a second substituent that binds to the metal of the conductive layer, provided on a second region of the conductive layer, wherein the first region and the second region do not overlap.

Abstract: The present disclosure relates to a substrate treatment apparatus and a substrate treatment method, and more particularly, to a substrate treatment apparatus and a substrate treatment method configured to deposit a uniform thin film on a substrate. A substrate treatment apparatus, in accordance with an exemplary embodiment, includes a reaction tube having an internal space formed therein, a substrate boat configured to load a plurality of substrates in multi-stages, and positioned in the internal space to partition a plurality of treatment spaces in which the plurality of substrates are respectively treated, a process gas supply part configured to supply a process gas to the plurality of treatment spaces, and a dilution gas supply part configured to supply a dilution gas for diluting the process gas within the plurality of treatment spaces.

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i

Abstract: Provided is a method of cyclically depositing a thin film including: performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source including oxygen into the chamber to form the deposited silicon as an oxide including silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide including the silicon.

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i

Abstract: Provided is a method of cyclically depositing a thin film including: performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source including oxygen into the chamber to form the deposited silicon as an oxide including silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide including the silicon.

Abstract: A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.

Abstract: A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.