Patents by Inventor Seok Hee Lee

Seok Hee Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11950501
    Abstract: An organic light emitting device including: a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode and including an emission layer, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a semitransparent or transparent electrode, and wherein the organic layer includes a layer having at least one of the compounds having at least one carbazole group, and a flat panel display device including the organic light emitting device. The organic light emitting device has low driving voltage, excellent current density, high brightness, excellent color purity, high efficiency, and long lifetime.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: April 2, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seok-Hwan Hwang, Young-Kook Kim, Yoon-Hyun Kwak, Jong-Hyuk Lee, Kwan-Hee Lee, Min-Seung Chun
  • Publication number: 20240105963
    Abstract: A method for manufacturing a gas diffusion layer for a fuel cell wherein carbon nanotubes are impregnated into Korean paper, thereby enhancing electroconductivity, and a gas diffusion layer manufactured thereby. The method for manufacturing a gas diffusion layer for a fuel cell which is to manufacture a gas diffusion layer as a constituent member of a unit cell in a fuel cell, includes a support preparation step of preparing a support with Korean paper; a dispersion preparation step of dispersing a carbon substance in a solvent to form a dispersion, a coating step of coating the support with the dispersion, and a thermal treatment step of thermally treating the dispersion-coated support to fix the carbon substance to the support.
    Type: Application
    Filed: March 6, 2023
    Publication date: March 28, 2024
    Inventors: Seung Tak Noh, Ji Han Lee, In Seok Lee, Jae Man Park, Won Jong Choi, Choong Hee Kim, Seong Hwang Kim, Jong Hoon Lee, Soo Jin Park, Seul Yi Lee
  • Publication number: 20240034981
    Abstract: Devices, systems, and methods for evaluating the viability of embryos are disclosed. In particular, devices, systems, and methods for measuring internal and external pH of an embryo, electrolytes, and oxidative stress markers for evaluating developmental potential of an embryo are provided. The methods disclosed herein should improve in vitro fertilization (IVF) outcomes by reducing inadvertent transfer of non-viable embryos.
    Type: Application
    Filed: October 21, 2021
    Publication date: February 1, 2024
    Inventors: Paolo Rinaudo, Seok Hee Lee
  • Publication number: 20220189676
    Abstract: A coil electronic component includes a body including a coil portion therein, and including a plurality of magnetic particles including an Fe-based alloy component, and an external electrode connected to the coil portion, wherein at least a portion of the plurality of magnetic particles include a first layer formed on a surface, and a second layer formed on a surface of the first layer, wherein the first layer includes an Fe oxide component and has a thickness of 10 nm or less.
    Type: Application
    Filed: April 27, 2021
    Publication date: June 16, 2022
    Inventors: Joong Won PARK, Il Jin PARK, Se Hyung LEE, Jun Sung LEE, Seok Hee LEE, Ji Hwan SHIN
  • Patent number: 10950608
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: March 16, 2021
    Assignees: SK hynix Inc., Korea Advanced Institute of Science and Technology
    Inventors: Jung-Min Moon, Tae-Kyun Kim, Seok-Hee Lee
  • Patent number: 10892262
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: January 12, 2021
    Assignees: SK hynix Inc., Korea Advanced Institute of Science and Technology
    Inventors: Jung-Min Moon, Tae-Kyun Kim, Seok-Hee Lee
  • Patent number: 10615422
    Abstract: Provided is a ceramic catalyst which may include a nanostructure composed of ionic salts; and catalyst particles attached to the surface of the nanostructure.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: April 7, 2020
    Assignee: GACHON UNIVERSITY OF INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Young Soo Yoon, Seok Hee Lee, Sung Pil Woo, Seo Yoon Shin
  • Patent number: 10595767
    Abstract: Disclosed are an apparatus and method for detecting dementia and providing a dementia patient management service.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: March 24, 2020
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Soon Shin, Seung-Yoon Nam, Seok-Hee Lee, Chan-Young Hahm
  • Publication number: 20190273081
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Application
    Filed: April 29, 2019
    Publication date: September 5, 2019
    Inventors: Jung-Min MOON, Tae-Kyun KIM, Seok-Hee LEE
  • Publication number: 20190252387
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Inventors: Jung-Min MOON, Tae-Kyun KIM, Seok-Hee LEE
  • Patent number: 10361206
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: July 23, 2019
    Assignees: SK HYNIX INC., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Min Moon, Tae-Kyun Kim, Seok-Hee Lee
  • Publication number: 20190172456
    Abstract: Provided is a method for sharing a photograph based on voice recognition in an aspect. The method may include obtaining an image for a photograph taken using a camera; obtaining voice data associated with the obtained image; generating a text by recognizing the obtained voice data; associating and storing the obtained image, the obtained voice data and the generated text; and outputting the store image together with at least one of the stored voice data and the stored text.
    Type: Application
    Filed: November 14, 2018
    Publication date: June 6, 2019
    Inventor: SEOK-HEE LEE
  • Patent number: 10177388
    Abstract: Provided are a cathode substrate, a high capacity all-solid-state battery, and a method for manufacturing the same. The cathode substrate includes a base in a mesh form and a cathode formed on the base, wherein the cathode is configured to overlap the base. The present invention may resolve a conventional problem of deterioration in battery efficiency, which has been caused by a long distance between an electrode and a cathode, and may produce a high capacity all-solid-state battery while suppressing or preventing an increase in the thickness of the cathode.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: January 8, 2019
    Assignee: GACHON UNIVERSITY OF INDUSTRY—ACADEMIC COOPERATION FOUNDATION
    Inventors: Young Soo Yoon, Seung Hyun Jee, Seok Hee Lee
  • Publication number: 20180108918
    Abstract: Provided is a ceramic catalyst which may include a nanostructure composed of ionic salts; and catalyst particles attached to the surface of the nanostructure.
    Type: Application
    Filed: September 25, 2017
    Publication date: April 19, 2018
    Inventors: Young Soo YOON, Seok Hee LEE, Sung Pil WOO, Seo Yoon SHIN
  • Publication number: 20170095193
    Abstract: Disclosed are an apparatus and method for detecting dementia and providing a dementia patient management service.
    Type: Application
    Filed: September 19, 2016
    Publication date: April 6, 2017
    Inventors: Hyun-Soon SHIN, Seung-Yoon NAM, Seok-Hee LEE, Chan-Young HAHM
  • Publication number: 20160164105
    Abstract: Provided are a cathode substrate, a high capacity all-solid-state battery, and a method for manufacturing the same. The cathode substrate includes a base in a mesh form and a cathode formed on the base, wherein the cathode is configured to overlap the base. The present invention may resolve a conventional problem of deterioration in battery efficiency, which has been caused by a long distance between an electrode and a cathode, and may produce a high capacity all-solid-state battery while suppressing or preventing an increase in the thickness of the cathode.
    Type: Application
    Filed: April 16, 2014
    Publication date: June 9, 2016
    Inventors: Young Soo YOON, Seung Hyun JEE, Seok Hee LEE
  • Publication number: 20150348976
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Application
    Filed: August 12, 2015
    Publication date: December 3, 2015
    Inventors: Jung-Min MOON, Tae-Kyun KIM, Seok-Hee LEE
  • Patent number: 9136376
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: September 15, 2015
    Assignees: SK HYNIX INC., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Min Moon, Tae-Kyun Kim, Seok-Hee Lee
  • Patent number: 9041621
    Abstract: An apparatus and method of implementing haptic-based networked virtual environments supporting high-resolution tiled displays. A haptic rendering process of detecting collision between a user of a haptic-device over a virtual environment and each of at least one virtual object and providing a physical force corresponding to a detection result to the haptic-device is performed, and a graphic rendering process of converting each virtual object represented as 3-D data into an object stream represented as 2-D data such that each virtual object is displayed as a 2-D image, and assigning a priority and a frame rate to each converted object stream according to a preset assignment criterion is performed. A plurality of displays provide a display image, including object streams of the virtual objects and background pixels, so that a virtual environment allowing the user of the haptic-device to visually and tactilely immerse thereto is effectively realized by utilizing limited resources.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: May 26, 2015
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jong Won Kim, Seok Hee Lee, Seok Ho Son
  • Publication number: 20130234240
    Abstract: A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.
    Type: Application
    Filed: February 5, 2013
    Publication date: September 12, 2013
    Applicants: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SK HYNIX INC.
    Inventors: Jung-Min MOON, Tae-Kyun KIM, Seok-Hee LEE