Abstract: The present invention relates to a method for manufacturing a secondary battery and a secondary battery. The method for manufacturing the secondary battery comprises an accommodation step of accommodating an electrode assembly in an accommodation part of a battery case, a vent membrane mounting step of mounting a vent membrane on a discharge hole, which passes between the inside and outside of the battery case, in the battery case, and a case sealing step of sealing the battery case, wherein the vent membrane allows only a gas to pass through the discharge hole of the battery case, but blocks a liquid.

Abstract: The present invention relates to a transformer and, more specifically, to a transformer including a secondary coil portion on which a conductive plate is stacked. A transformer according to one embodiment of the present invention can comprise: a bobbin; a core portion coupled to the bobbin along the outer side of the bobbin; and a plurality of conductive plates inserted into the bobbin and stacked in a thickness direction.

Abstract: A method of controlling operation of an integrated control apparatus for autonomous vehicles includes setting one joystick lever touched first by a user between a first joystick lever and a second joystick lever to a function activation state, or setting any one joystick lever with a larger steering operation force to the function activation state at the time of steering the first joystick lever and the second joystick lever together. User fatigue when operating the joystick levers is reduced.

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

Abstract: A wearable airbag includes an attachment unit, which is provided at the wearable airbag and a counterpart wearable airbag so as to structurally connect the wearable airbag to the counterpart wearable airbag, the counterpart wearable airbag being worn at a location on a user's body adjacent to a location at which the wearable airbag is worn, and an electrical connection unit configured to transmit and receive an electrical signal to the counterpart wearable airbag in a state in which the wearable airbag is coupled to the counterpart wearable airbag via the attachment unit.

Abstract: A device for inspecting a welded state of a plurality of welded portions coupling a non-coating portion of an electrode to an electrode tab includes a resistance measurer having a plurality of resistance measurement probes which respectively measure resistance values of the plurality of welded portions; and a resistance inspector which compares each of the resistance values of the plurality of welded portions, with a critical resistance value. When the resistance value of at least one welded portion among the plurality of welded portions exceeds the critical resistance value, the at least one welded portion is determined as having a weak welding. The plurality of resistance measurement probes respectively measure the resistance values of the plurality of welded portions while being respectively in contact with a non-welding surface disposed between the plurality of welded portions and non-welding surfaces outside outermost welded portions of the plurality of welded portions.

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

Abstract: A vehicle control system may include a controller that detects an object outside a vehicle, calculates an angle based on a ratio of a relative speed between the object and the vehicle to a speed of the vehicle, and updates a phase curve reflecting a phase distortion of an input signal based on the calculated angle.

Abstract: An integrated control apparatus for an autonomous driving vehicle is configured to perform steering, shifting, accelerating, and braking of the vehicle by a user operating a foldable steering wheel, a shift slide switch, an acceleration trigger switch, and a brake button switch that are provided in a movable manipulator when the vehicle is turned from an autonomous driving mode to a manual driving mode.

Abstract: Disclosed herein is a method for key-value caching. The method may include initializing a key-value cache and processing data in the order of a key-value store, a service, and the key-value cache.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.