Patents by Inventor Seok-Jun Seo

Seok-Jun Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240082213
    Abstract: The present disclosure relates to a functional composition for the prevention, amelioration or treatment of obesity or lipid-related metabolic disorders, which comprises a steroid sulfatase inhibitor as an active ingredient.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Jung Taek Seo, Seok Jun Moon, Sung-Jin Kim
  • Publication number: 20240082208
    Abstract: A steroid sulfatase inhibitor provided by the present invention is a safe substance without toxicity and adverse effects, has inhibitory activity against various viruses, and thus is capable of effectively preventing, ameliorating, or treating viral infections or diseases caused by viral infections.
    Type: Application
    Filed: January 10, 2022
    Publication date: March 14, 2024
    Inventors: Jung Taek Seo, Seok Jun Moon, Sung-Jin Kim, Jae Myun Lee, Pil-Gu Park, Su Jin Hwang, Moon Geon Lee
  • Patent number: 11854536
    Abstract: A keyword spotting apparatus, method, and computer-readable recording medium are disclosed. The keyword spotting method using an artificial neural network according to an embodiment of the disclosure may include obtaining an input feature map from an input voice; performing a first convolution operation on the input feature map for each of n different filters having the same channel length as the input feature map, wherein a width of each of the filters is w1 and the width w1 is less than a width of the input feature map; performing a second convolution operation on a result of the first convolution operation for each of different filters having the same channel length as the input feature map; storing a result of the second convolution operation as an output feature map; and extracting a voice keyword by applying the output feature map to a learned machine learning model.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: December 26, 2023
    Assignee: Hyperconnect Inc.
    Inventors: Sang Il Ahn, Seung Woo Choi, Seok Jun Seo, Beom Jun Shin
  • Publication number: 20230154453
    Abstract: Systems and techniques to generate imitative responses are illustrated. response generation method performed in an electronic apparatus of the present disclosure includes acquiring at least one piece of utterance data, acquiring a first context corresponding to the utterance data from a context candidate set, generating one or more dialogue sets including the first context and the utterance data, receiving a second context from a user, and acquiring a response corresponding to the second context using a language model based on the one or more dialogue sets.
    Type: Application
    Filed: October 13, 2022
    Publication date: May 18, 2023
    Applicant: Hyperconnect Inc.
    Inventors: Enkhbayar Erdenee, Beom Su Kim, Sang Bum Kim, Seok Jun Seo, Jin Yong Yoo, Bu Ru Chang, Seung Ju Han
  • Publication number: 20230080930
    Abstract: Disclosed is a method of training a dialogue model in an electronic device, the method including selecting a first context from a first dialogue data set including at least one pair of a context and a response corresponding to the context, generating a first response corresponding to the first context through a first dialogue model, generating an augmented dialogue dataset by incorporating a pair of the first context and the first response corresponding to the first context into the first dialogue data set, and training a second dialogue model based on the augmented dialogue dataset.
    Type: Application
    Filed: June 17, 2022
    Publication date: March 16, 2023
    Applicant: Hyperconnect Inc.
    Inventors: Seok Jun Seo, Seung Ju Han, Beom Su Kim, Bu Ru Chang, Enkhbayar Erdenee
  • Publication number: 20230077528
    Abstract: A training method of a conversation model according to various example embodiments of the present disclosure may include identifying a first context, identifying a first response set corresponding to the first context based on a first model, identifying a response subset selected from the first response set based on a gold response corresponding to the first context and training a second model based on the first context information and the response subset.
    Type: Application
    Filed: June 2, 2022
    Publication date: March 16, 2023
    Applicant: Hyperconnect Inc.
    Inventors: Enkhbayar Erdenee, Beom Su Kim, Seok Jun Seo, Sang Il Ahn, Bu Ru Chang, Seung Ju Han
  • Patent number: 11457077
    Abstract: A server may include a communication interface for receiving a plurality of profile information from a plurality of terminals; and a processor configured to divide users of the plurality of terminals into a plurality of groups based on a first criterion, to divide users of a first gender included in each group into a plurality of subgroups based on a second criterion different from the first criterion, to divide users of a second gender different from the first gender, included in each group into a plurality of matching groups to correspond to each of the plurality of subgroups, and to provide profile information of users included in each of the plurality of matching groups corresponding to each of the plurality of subgroups among the plurality of profile information to users included in each of the plurality of subgroups.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: September 27, 2022
    Assignee: Hyperconnect Inc.
    Inventors: Sang Il Ahn, Hyeong Keol Nam, Seok Jun Seo, Seok Hwan Choi, Jae Hyeuk Oh
  • Publication number: 20210075883
    Abstract: A server may include a communication interface for receiving a plurality of profile information from a plurality of terminals; and a processor configured to divide users of the plurality of terminals into a plurality of groups based on a first criterion, to divide users of a first gender included in each group into a plurality of subgroups based on a second criterion different from the first criterion, to divide users of a second gender different from the first gender, included in each group into a plurality of matching groups to correspond to each of the plurality of subgroups, and to provide profile information of users included in each of the plurality of matching groups corresponding to each of the plurality of subgroups among the plurality of profile information to users included in each of the plurality of subgroups.
    Type: Application
    Filed: September 9, 2020
    Publication date: March 11, 2021
    Inventors: Sang Il Ahn, Hyeong Keol Nam, Seok Jun Seo, Seok Hwan Choi, Jae Hyeuk Oh
  • Publication number: 20210074270
    Abstract: A keyword spotting apparatus, method, and computer-readable recording medium are disclosed. The keyword spotting method using an artificial neural network according to an embodiment of the disclosure may include obtaining an input feature map from an input voice; performing a first convolution operation on the input feature map for each of n different filters having the same channel length as the input feature map, wherein a width of each of the filters is w1 and the width w1 is less than a width of the input feature map; performing a second convolution operation on a result of the first convolution operation for each of different filters having the same channel length as the input feature map; storing a result of the second convolution operation as an output feature map; and extracting a voice keyword by applying the output feature map to a learned machine learning model.
    Type: Application
    Filed: September 4, 2020
    Publication date: March 11, 2021
    Inventors: Sang Il Ahn, Seung Woo Choi, Seok Jun Seo, Beom Jun Shin
  • Patent number: 10006554
    Abstract: A spring vent for a tire vulcanizing mold comprises: a sleeve having a flow path vertically passing therethrough; a head opening/closing an inlet at an upper end of the flow path; a rod comprising a bar-type body formed below the head and disposed along the flow path and a stopper formed below the body to be hung to an outside of an outlet at a lower end of the flow path; and a spring inserted into the body. The stopper of the rod is formed to have a spherical shape. An elastic hole having an open bottom is formed in the stopper.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 26, 2018
    Assignee: MEGA INDUSTRY CO., LTD.
    Inventor: Seok Jun Seo
  • Publication number: 20170350520
    Abstract: A spring vent for a tire vulcanizing mold comprises: a sleeve having a flow path vertically passing therethrough; a head opening/closing an inlet at an upper end of the flow path; a rod comprising a bar-type body formed below the head and disposed along the flow path and a stopper formed below the body to be hung to an outside of an outlet at a lower end of the flow path; and a spring inserted into the body. The stopper of the rod is formed to have a spherical shape. An elastic hole having an open bottom is formed in the stopper.
    Type: Application
    Filed: July 15, 2016
    Publication date: December 7, 2017
    Inventor: Seok Jun Seo
  • Patent number: 9343534
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Grant
    Filed: November 29, 2013
    Date of Patent: May 17, 2016
    Assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.
    Inventors: Tae-sang Kim, Sun-jae Kim, Hyun-suk Kim, Myung-kwan Ryu, Joon-seok Park, Seok-jun Seo, Jong-baek Seon, Kyoung-seok Son
  • Patent number: 9245957
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Grant
    Filed: November 29, 2013
    Date of Patent: January 26, 2016
    Assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.
    Inventors: Tae-sang Kim, Sun-jae Kim, Hyun-suk Kim, Myung-kwan Ryu, Joon-seok Park, Seok-jun Seo, Jong-baek Seon, Kyoung-seok Son
  • Patent number: 9123750
    Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: September 1, 2015
    Assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.
    Inventors: Joon-seok Park, Sun-jae Kim, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Seok-jun Seo, Jong-baek Seon, Kyoung-seok Son, Sang-yoon Lee
  • Patent number: 9076721
    Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: July 7, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joon-seok Park, Sun-jae Kim, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Seok-jun Seo, Jong-baek Seon, Kyoung-seok Son, Sang-yoon Lee
  • Patent number: 9035294
    Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Joon-seok Park, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Jong-baek Seon, Kyoung-seok Son, Sang-yoon Lee, Seok-jun Seo
  • Publication number: 20150060990
    Abstract: Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer.
    Type: Application
    Filed: March 12, 2014
    Publication date: March 5, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sun-jae KIM, Tae-sang KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Kyoung-seok SON, Seong-ho CHO
  • Patent number: 8829515
    Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: September 9, 2014
    Assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.
    Inventors: Jong-baek Seon, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Joon-seok Park, Seok-jun Seo, Kyoung-seok Son, Sang-yoon Lee
  • Publication number: 20140159035
    Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
    Type: Application
    Filed: September 3, 2013
    Publication date: June 12, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-seok PARK, Sun-jae KIM, Tae-sang KIM, Hyun-suk KIM, Myung-kwan RYU, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON, Sang-yoon LEE
  • Publication number: 20140152936
    Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
    Type: Application
    Filed: November 29, 2013
    Publication date: June 5, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-sang KIM, Sun-jae KIM, Hyun-suk KIM, Myung-kwan RYU, Joon-seok PARK, Seok-jun SEO, Jong-baek SEON, Kyoung-seok SON