Abstract: The present invention relates to: a hot rolled steel sheet for ground reinforcement and a steel pipe for ground reinforcement, which have excellent strength and formability; and manufacturing methods thereof. An aspect of the present disclosure is to provide a hot-rolled steel sheet for ground reinforcement and a steel pipe for ground reinforcement, having excellent strength and formability, and manufacturing methods thereof.

Abstract: A display device includes a display panel including a gate line and a data line, a gate driver that outputs a gate voltage to the gate line according to a gate output enable signal, a data driver that outputs a data voltage to the data line, a detecting circuit that detects a state of a clock signal. The state of the clock signal includes a normal or abnormal state. A masking circuit performs a masking operation for the gate output enable signal according to the state of the clock signal and a level of a reset signal, where the level of the reset signal includes a first or second level corresponding to a power-on or off of the display device, respectively.

Abstract: The present invention discloses a data driving apparatus and method for a liquid crystal display device having a first multiplexer part performing a time-division on inputted digital pixel data, a digital-analog converter part converting the time-divided digital pixel data from the first multiplexer part to analog pixel signals, a demultiplexer part supplying the analog pixel signals from the digital-analog converter part to a plurality of output channels, and an output part sampling and holding first received analog pixel signals from the demultiplexer part and holding second received analog pixel signals and simultaneously outputting both the first and second received pixel signals to corresponding data lines.

Abstract: The present invention relates to a circuit for driving a liquid crystal display device in which no multi-flicker preventive signal FLK, but only single flicker preventive signal FLK, is used for reducing numbers of pins of a timing controller and a level shifter.

Abstract: A method for manufacturing a semiconductor device includes forming a gate insulating layer, a gate and a protective layer on a semiconductor substrate, forming a spacer on lateral sides of the protective layer and the gate, forming one or more junction regions in the semiconductor substrate at sides of the gate, partially filling a gap between adjacent gates by selectively forming a conductive layer on an exposed portion of the semiconductor substrate between the adjacent gates, forming an insulating layer over the semiconductor substrate so as to fill a full height of the gap between the adjacent gates, and forming a contact hole partially exposing the conductive layer by etching the insulating layer.

Abstract: The present invention relates to a circuit for driving a liquid crystal display device in which no multi-flicker preventive signal FLK, but only single flicker preventive signal FLK, is used for reducing numbers of pins of a timing controller and a level shifter.

Abstract: A liquid crystal display device includes a liquid crystal panel, including multiple pixels, and a driving circuit. The pixels are driven according to a first driving pattern. The driving circuit monitors the liquid crystal panel for a cross-talk condition. The driving circuit generates a signal and changes the driving pattern to an alternate driving pattern when a cross-talk condition is detected in the liquid crystal panel.

Abstract: Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.

Abstract: A liquid crystal display device and a driving method thereof for preventing a brightness difference between horizontal line blocks are disclosed. In the liquid crystal display device, a liquid crystal display panel has a liquid crystal cell matrix. A power supply generates a common voltage. Common lines directly on a substrate of the liquid crystal display panel are connected to a common electrode of the liquid crystal cell. A common voltage compensator compensates for the common voltage into a large resistance value with a resistance value greater than a combination of resistances of the common lines and the large resistance directly between the power supply and the common lines.

Abstract: A semiconductor device consistent with the present invention includes a semiconductor substrate having a semiconductor chip region and a scribe region; a first insulating layer formed in the semiconductor chip region of the semiconductor substrate; a metal contact plug formed in the first insulating layer; a metal sidewall formed on a side of the first insulating layer in the scribe region; a metallization wiring electrically connected with the substrate via the metal contact plug; and a second insulating layer and a protective layer formed over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.

Abstract: A liquid crystal display device with a liquid crystal layer disposed between first and second substrates in which the first substrate is divided into an active region and a pad region outside the active region that includes: gate lines and data lines crossing each other to define pixels in the active region of the first substrate; a thin film transistor and a pixel electrode in each of the pixels; common lines parallel to the gate lines in the active region; gate pads in the pad region, the gate pads electrically connected to the gate lines; data pads in the pad region, the data pads electrically connected to the data lines; a common electrode along an edge of the active region and electrically connected with the common lines; an insulation film over the common electrode; and a distortion preventing electrode overlapping the common electrode with the insulation film interposed therebetween for creating a capacitance.

Abstract: A method for manufacturing a semiconductor device includes forming a first insulating layer on a semiconductor substrate having a semiconductor chip region and a scribe region; forming a mask pattern on the first insulating layer; removing portions of the first insulating layer using the mask pattern so as to form a contact hole in the semiconductor chip region and a scribe region opening exposing the scribe region; forming a metal contact plug in a contact hole and a metal sidewall on a side of the first insulating layer in the scribe region opening; forming a metallization wiring on the first insulating layer; and forming a second insulating layer and a protective layer over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.

Abstract: An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.

Abstract: A method of forming a metal line in a semiconductor device includes: forming a lower insulation layer for insulation from the lower substrate; forming a first metal line at a certain region on the lower insulation layer; sequentially forming a first oxide layer, an FSG (Fluorine-doped Silicate Glass) layer, and a second oxide layer on the lower insulation layer and the first metal line; removing the first oxide layer, the FSG layer, and the second oxide layer so as to expose the first metal line; forming an upper insulation layer on the lower insulation layer and the first metal line; forming a contact hole by etching the upper insulation layer to a degree that the first metal line is exposed; and forming a second metal line by depositing a metal material in the contact hole.

Abstract: A liquid crystal display device includes a liquid crystal panel, including multiple pixels, and a driving circuit. The pixels are driven according to a first driving pattern. The driving circuit monitors the liquid crystal panel for a cross-talk condition. The driving circuit generates a signal and changes the driving pattern to an alternate driving pattern when a cross-talk condition is detected in the liquid crystal panel.

Abstract: Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.

Abstract: A display device includes a display panel including a gate line and a data line, a gate driver that outputs a gate voltage to the gate line according to a gate output enable signal, a data driver that outputs a data voltage to the data line, a detecting circuit that detects a state of a clock signal. The state of the clock signal includes a normal or abnormal state. A masking circuit performs a masking operation for the gate output enable signal according to the state of the clock signal and a level of a reset signal, where the level of the reset signal includes a first or second level corresponding to a power-on or off of the display device, respectively.

Abstract: Methods of fabricating a semiconductor device is disclosed. An illustrated method comprises: providing a substrate including an active region and a non-active region; forming a first gate electrode including a dielectric layer pattern, a first conducting layer pattern, and an insulating layer pattern; growing a thermal oxide layer on the substrate and the first gate electrode; forming a nitride layer over the substrate and the thermal oxide layer; and removing the nitride layer and the thermal oxide layer using an etch back process to form spacers on sidewalls of the first gate electrode. By including the thermal oxide layer, the spacers ensure insulation capability.

Abstract: Semiconductor devices and methods for fabricating a silicide of a semiconductor device are disclosed. An illustrated method comprises: forming a gate electrode; depositing an insulating layer; removing a predetermined portion of the insulating layer in order to expose a portion of the gate electrode; forming silicide on the exposed portion of the gate electrode; and etching the insulating layer while using the silicide as an etching mask.

Abstract: A method of forming a metal line in a semiconductor device includes: forming a lower insulation layer for insulation from the lower substrate; forming a first metal line at a certain region on the lower insulation layer; sequentially forming a first oxide layer, an FSG (Fluorine-doped Silicate Glass) layer, and a second oxide layer on the lower insulation layer and the first metal line; removing the first oxide layer, the FSG layer, and the second oxide layer so as to expose the first metal line; forming an upper insulation layer on the lower insulation layer and the first metal line; forming a contact hole by etching the upper insulation layer to a degree that the first metal line is exposed; and forming a second metal line by depositing a metal material in the contact hole.