Abstract: A semiconductor system includes a controller outputting a clock, a chip selection signal, a command address, and data, and a semiconductor device performing an auto-refresh operation when the chip selection signal and command address input in synchronization with the clock have a combination for performing the auto-refresh operation, correcting an error of internal data stored therein by performing a read-modify-write operation instead of the auto-refresh operation when the auto-refresh operation is performed a first set number of times and storing the corrected internal data, performing a self-refresh operation when the chip selection signal and command address input in synchronization with the clock have a combination for performing the self-refresh operation, and correcting an error of the internal data stored therein by performing a read-modify-write operation instead of the self-refresh operation when the self-refresh operation is performed a second set number of times and to store the corrected internal

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.

Abstract: The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.

Abstract: Disclosed are a method of forming metal wiring and metal wiring formed using the same. The method includes printing wiring using an ink composition including metallic nanoparticles and dispersants maintaining dispersion of the metallic nanoparticles, performing a first firing process of firing the wiring under vacuum or in an inert atmosphere to suppress grain growth, and performing a second firing process of firing the wiring with the vacuum or inert atmosphere released, to accelerate grain growth. The method of forming metal wiring induces abnormal grain growth by rapidly removing dispersants, capable of inducing the growth of metallic nanoparticles, at a temperature at which the growth force of the metallic nanoparticles is high, in the process of firing the metallic nanoparticles. Accordingly, the metal wiring has a coarse-grained structure containing metallic particles with a large average particle size, and the electrical and mechanical characteristics thereof can be enhanced.

Abstract: Disclosed are a method of forming metal wiring and metal wiring formed using the same. The method includes printing wiring using an ink composition including metallic nanoparticles and dispersants maintaining dispersion of the metallic nanoparticles, performing a first firing process of firing the wiring under vacuum or in an inert atmosphere to suppress grain growth, and performing a second firing process of firing the wiring with the vacuum or inert atmosphere released, to accelerate grain growth. The method of forming metal wiring induces abnormal grain growth by rapidly removing dispersants, capable of inducing the growth of metallic nanoparticles, at a temperature at which the growth force of the metallic nanoparticles is high, in the process of firing the metallic nanoparticles. Accordingly, the metal wiring has a coarse-grained structure containing metallic particles with a large average particle size, and the electrical and mechanical characteristics thereof can be enhanced.