Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: A semiconductor device includes an internal operation control circuit suitable for generating a set period signal which is enabled for a set period, in response to a write command and an internal operation control signal, and generating a column select signal, an output control signal and an input control signal in response to the set period signal; and an internal operation circuit suitable for performing an internal operation of converting parity data generated from input data and storing the converted parity data in a memory cell array, in response to the column select signal, the output control signal and the input control signal.

Abstract: A semiconductor device including drivers is disclosed, which can maximize driving ability of a plurality of drivers installed in a given region when the plurality of drivers is arranged in an array shape. The semiconductor device includes: a first active region; a second active region spaced apart from the first active region a predetermined distance in a first direction; a first gate finger group located in the first active region, and configured to include an odd number of gate fingers; and a second gate finger group located in the second active region, and configured to include an even number of gate fingers electrically coupled to the gate fingers of the first gate finger group.

Abstract: A repair control device for memory cells divided into a plurality of banks may include a failed address storage circuit configured to sort and store a plurality of failed addresses each containing a failed bank address and a failed row address, according to the failed row address, and store the failed row address by matching the failed row address with total failed bank information representing one or more failed banks indicated by the failed row address. The repair control device also includes an address comparison circuit configured to compare an input address to a pair comprised of the failed row address and the total failed bank information, stored in the failed address storage circuit, and generate a hit signal based on the comparison result. The repair control device further includes an address generation circuit configured to generate an access target address based on the hit signal.

Abstract: A repair control device for memory cells divided into a plurality of banks may include a failed address storage circuit configured to sort and store a plurality of failed addresses each containing a failed bank address and a failed row address, according to the failed row address, and store the failed row address by matching the failed row address with total failed bank information representing one or more failed banks indicated by the failed row address. The repair control device also includes an address comparison circuit configured to compare an input address to a pair comprised of the failed row address and the total failed bank information, stored in the failed address storage circuit, and generate a hit signal based on the comparison result. The repair control device further includes an address generation circuit configured to generate an access target address based on the hit signal.

Abstract: A semiconductor device includes an internal operation control circuit suitable for generating a set period signal which is enabled for a set period, in response to a write command and an internal operation control signal, and generating a column select signal, an output control signal and an input control signal in response to the set period signal; and an internal operation circuit suitable for performing an internal operation of converting parity data generated from input data and storing the converted parity data in a memory cell array, in response to the column select signal, the output control signal and the input control signal.

Abstract: A semiconductor device includes: first and second memory cell regions disposed adjacent to each other in a first direction, and suitable for sharing a sub-word line driving signal, and a first sub-word line driving unit disposed in a crossing area that is disposed between the first and second memory cell regions in a diagonal direction. The first sub-word line driving unit includes a first sub-word line driver for driving the first memory cell regions, a second sub-word line driver for driving the second memory cell regions, and an interconnection for transmitting the sub-word line driving signal, which extends in the first direction.

Abstract: A semiconductor device including drivers is disclosed, which can maximize driving ability of a plurality of drivers installed in a given region when the plurality of drivers is arranged in an array shape. The semiconductor device includes: a first active region; a second active region spaced apart from the first active region a predetermined distance in a first direction; a first gate finger group located in the first active region, and configured to include an odd number of gate fingers; and a second gate finger group located in the second active region, and configured to include an even number of gate fingers electrically coupled to the gate fingers of the first gate finger group.

Abstract: A semiconductor device includes: first and second memory cell regions disposed adjacent to each other in a first direction, and suitable for sharing a sub-word line driving signal, and a first sub-word line driving unit disposed in a crossing area that is disposed between the first and second memory cell regions in a diagonal direction. The first sub-word line driving unit includes a first sub-word line driver for driving the first memory cell regions, a second sub-word line driver for driving the second memory cell regions, and an interconnection for transmitting the sub-word line driving signal, which extends in the first direction.

Abstract: Provided is a line layout for a semiconductor memory apparatus, which is a line layout of a line layer formed over a memory region so as to cross the memory region. The line layout includes as unit lines: a data line disposed between a pair of shielding lines; a pair of address line groups disposed at one side of the shielding lines; and a power supply line disposed between the pair of address line groups.