Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed thereunder, a third LED stack disposed thereunder and including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, an insulation layer between the second bonding layer and the second LED stack, lower buried layers passing through the second LED stack and the insulation layer and electrically connected to the first and second conductivity type semiconductor layers of the third LED stack, respectively, upper buried layers passing through the first LED stack and the second bonding layer and electrically connected to the lower buried layers, and upper connectors disposed on the first LED stack and including upper connectors covering and electrically connected to the upper buried layers, respectively.

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board, and a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices

Abstract: A light emitting device for a display including first, second, and third LED stacks, and bump pads disposed on the first LED stack, in which each LED stack includes a first semiconductor layer and a second semiconductor layer exposing a portion of the first semiconductor layer, the first LED stack includes upper through-holes and the second LED stack includes lower through-holes, the bump pads include a first bump pad electrically connected to the second semiconductor layer of the first LED stack, a second bump pad electrically connected to the second semiconductor layer of the second LED stack through the upper through-hole, a third bump pad electrically connected to the second semiconductor layer of the third LED stack through the upper through-hole and the lower through-hole, and a common bump pad electrically connected to the first semiconductor layers of each LED stack in common.

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

Abstract: A light emitting device including a first light emitting part having a first area, a second light emitting part having a second area, and a third light emitting part having a third area, in which the first light emitting part is disposed on the same plane as the second light emitting part, the third light emitting part is disposed over the first and second light emitting parts, and the third area is larger than each of the first and second areas.

Abstract: A light emitting device including first, second, and third light emitting parts disposed one over another and each including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, a first conductive pattern at least partially disposed between the second and third light emitting parts, the first conductive pattern including a first portion electrically coupled with at least one of the first-type and second-type semiconductor layers of the first and second light emitting parts, and a second portion extending from the first portion and disposed on one surface of the second light emitting part between the second and third light emitting parts, and a second conductive pattern disposed on the third light emitting part and electrically coupled with the first conductive pattern, in which the second conductive pattern at least partially overlaps with the second portion of the first conductive pattern.

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.

Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arcsec.

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.