Abstract: A printed circuit board and a manufacturing method of the printed circuit board are disclosed. The printed circuit board includes: a first insulation layer having a first pattern formed thereon; a first trench caved in one surface of the first insulation layer along at least a portion of the first pattern; and a second insulation layer stacked on one surface of the first insulation layer so as to cover the first pattern. The first trench is filled by the second insulation layer.

Abstract: Disclosed is a printed circuit board, including a base member, an insulating layer formed on each of both surfaces of the base member so that the surfaces of the base member are flattened, a circuit layer formed on the insulating layer, and a via for connecting the circuit layer formed on one surface of the base member with the circuit layer formed on the other surface of the base member. A method of manufacturing the printed circuit board is also provided.

Abstract: A dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode.

Abstract: A method of manufacturing a wafer level package including: preparing a substrate wafer including a plurality of pads formed on a bottom surface, a plurality of chips positioned on a top surface, and dicing lines for dividing the chips; forming external connection units on the pads; coating resin on the dicing lines by positioning masks on the substrate wafer to expose only the dicing lines; removing the masks; encapsulating the chips positioned between the resin by coating the chips with encapsulant and cutting a wafer level package along the dicing lines coated with the resin into units.

Abstract: A method of manufacturing a dual face package, including: preparing an upper substrate composed of an insulating layer including a post via-hole; forming a filled electrode in a semiconductor substrate, the filled electrode being connected to a die pad; applying an adhesive layer on one side of the semiconductor substrate including the filled electrode, and attaching the upper substrate to the semiconductor substrate; cutting another side of the semiconductor substrate in a thickness direction, thus making the filled electrode into a through-electrode; and forming a post electrode in the post via-hole, forming an upper redistribution layer connected to the post electrode of the semiconductor substrate, and forming a lower redistribution layer connected to the through-electrode on the other side of the semiconductor substrate.

Abstract: The present invention relates to a method of manufacturing a wafer level package including the steps of: preparing a substrate wafer including a plurality of pads formed on a bottom surface, a plurality of chips positioned on a top surface, and dicing lines for dividing the chips; forming external connection units on the pads; coating resin on the dicing lines by positioning masks on the substrate wafer to expose only the dicing lines; removing the masks; encapsulating the chips positioned between the resin by coating the chips with encapsulant; removing the resin coated on the dicing lines; and cutting a wafer level package along the dicing lines exposed by removing the resin into units.

Abstract: Disclosed is a method of manufacturing a wafer level package, which includes arranging semiconductor dies on a carrier, forming a protective layer between the semiconductor dies of the carrier through screen printing, primarily heat hardening the protective layer, simultaneously pressing and secondarily heat hardening the protective layer, and removing the carrier, so that a thickness difference between the semiconductor dies and the protective layer is not formed and the warping of the wafer level package is reduced.

Abstract: An interposer includes: an insulation plate where a via is formed, the insulation plate including a resin or a ceramic; a first upper redistribution layer electrically connected to the via along a circuit pattern designed on the top surface of the insulation plate; a first upper protection layer laminated to expose a portion of the first upper redistribution layer and protecting the first upper redistribution layer; a second upper redistribution layer electrically connected to the first upper redistribution layer and laminated along a designed circuit pattern designed; a second upper protection layer laminated to expose a portion of the second upper redistribution layer and protecting the second upper redistribution layer; and an under bump metallization (UBM) formed at the exposed portion of the second upper redistribution layer.

Abstract: The present invention relates to a method of manufacturing a wafer level package including the steps of: preparing a substrate wafer including a plurality of pads formed on a bottom surface, a plurality of chips positioned on a top surface, and dicing lines for dividing the chips; forming external connection units on the pads; coating resin on the dicing lines by positioning masks on the substrate wafer to expose only the dicing lines; removing the masks; encapsulating the chips positioned between the resin by coating the chips with encapsulant; removing the resin coated on the dicing lines; and cutting a wafer level package along the dicing lines exposed by removing the resin into units.

Abstract: Disclosed herein is a dual face package and a method of manufacturing the same. The dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode. The dual face package is produced by a simple process and is applicable to a large diameter wafer level package.