Abstract: A coil component includes a body including magnetic metal powder and an insulating resin, an insulating substrate embedded in the body, a coil portion disposed on at least one side of the insulating substrate the body, and having a lead-out pattern exposed from one of end surfaces of the body opposing each other, an external insulating layer exposing the lead-out pattern while surrounding the body, and including a magnetic ceramic, and an external electrode disposed on the body, and connected to the lead-out pattern.

Abstract: A bank interleaving controller may include a power calculator and a write driver. The power calculator may calculate a total power consumption by adding a power consumption of one or more memory banks that are performing write operations and an amount of power that is expected to be additionally consumed to write input data. The write driver may write the input data to a memory cell corresponding to an input address when the total power consumption is equal to or less than a reference power consumption.

Abstract: A bank interleaving controller may include a power calculator and a write driver. The power calculator may calculate a total power consumption by adding a power consumption of one or more memory banks that are performing write operations and an amount of power that is expected to be additionally consumed to write input data. The write driver may write the input data to a memory cell corresponding to an input address when the total power consumption is equal to or less than a reference power consumption.

Abstract: In accordance with an embodiment of the present disclosure, a semiconductor device may be provided. The semiconductor device may semiconductor device may be configured to store a bank address applied to an active signal from among command signals, and may perform a read or a write operation using the stored bank address based on activation of a command signal.

Abstract: A semiconductor device is implemented with a technology for removing a command bubbling generated when performing a rank-to-rank switching on chips that are stacked and interconnected through a through silicon via (TSV). The semiconductor device includes a first memory, a second memory stacked over the first memory to input/output data through a TSV, and an arbiter configured to adjust first data received from the first memory and second data received from the second memory through the TSV and provide the adjusted data to an input/output (I/O) pad.

Abstract: A semiconductor system includes a memory configured to output a parity bit during a read operation and receive a data mask (DM) signal during a write operation. The semiconductor system also includes a System On Chip (SOC) configured to detect errors by decoding the parity bit during the read operation, and output the DM signal to the memory during the write operation. Since the parity bit is generated in the memory based on data received from outside the memory, the semiconductor device and a corresponding semiconductor system may reduce the size of a storage space for parity bits.

Abstract: A semiconductor package may include first and second semiconductor chips stacked one upon the other, and each including, over a bottom surface thereof, first normal pads electrically coupled with first input/output circuits and first dummy pads located over the bottom surface of the first semiconductor chip. The semiconductor package may include first through electrodes passed through the first semiconductor chip, and electrically coupled to the first dummy pads of the first semiconductor chip and the first normal pads of the second semiconductor chip. The semiconductor package may include a substrate configured to support the bottom surface of the first semiconductor chip, and including first coupling pads electrically coupled with the first normal pads and the first dummy pads of the first semiconductor chip, respectively.

Abstract: A semiconductor package includes a first substrate, a plurality of memory chips horizontally disposed on the first substrate, and having one surfaces which face the first substrate, other surfaces which face away from the one surfaces, and first bumps formed on the other surfaces, a second substrate disposed on the plurality of memory chips and electrically connected, a sub-substrate horizontally disposed on the first substrate together with the plurality of memory chips and electrically connecting the first substrate and the second substrate, and a driving chip having second bumps on one surface thereof and mounted to the second substrate such that the second bumps are electrically connected with the second substrate.

Abstract: A semiconductor device including a chip stack structure having a plurality of semiconductor chips, the semiconductor chips being stacked such that they are electrically connected using through-electrodes, and a support frame attached to a side surface of the chip stack structure.

Abstract: A data input/output (I/O) device includes a plurality of data units and an I/O assembly. The plurality of data units is coupled to a global I/O (GIO) line through corresponding local I/O (LIO) lines and configured to receive or transmit a plurality of data groups through the corresponding LIO lines. At least one of the plurality of data units have a different operation speed. The I/O assembly performs serial/parallel conversion operations on the plurality of data groups including a high-speed data group and outputs results of the serial/parallel conversion operations. The high-speed data group is output from the at least one of the plurality of data units having the different operation speed.

Abstract: A semiconductor system includes a memory configured to output a parity bit during a read operation and receive a data mask (DM) signal during a write operation. The semiconductor system also includes a System On Chip (SOC) configured to detect errors by decoding the parity bit during the read operation, and output the DM signal to the memory during the write operation. Since the parity bit is generated in the memory based on data received from outside the memory, the semiconductor device and a corresponding semiconductor system may reduce the size of a storage space for parity bits.

Abstract: A semiconductor device is implemented with a technology for removing a command bubbling generated when performing a rank-to-rank switching on chips that are stacked and interconnected through a through silicon via (TSV). The semiconductor device includes a first memory, a second memory stacked over the first memory to input/output data through a TSV, and an arbiter configured to adjust first data received from the first memory and second data received from the second memory through the TSV and provide the adjusted data to an input/output (I/O) pad.

Abstract: A chip die including a first input/output (I/O) pad configured to transmit/receive an I/O signal of a memory cell array included in the chip die; a second I/O pad configured to, if a stacked chip die exists on the chip die, transmit/receive a via I/O signal of the stacked chip die, and configured to, if the stacked chip die does not exist on the chip die, transmit/receive a differential I/O signal of the chip die; and an I/O driver configured to receive an operation mode signal including information as to whether the stacked chip die exists on the chip die in such a manner that the second I/O pad is configured to transmit/receive the via I/O signal or the differential I/O signal.

Abstract: A semiconductor memory device includes a plurality of first regions formed in a line-type and extending in a first direction, and a plurality of second regions and a plurality of third regions arranged between adjacent first regions in a zigzag manner.

Abstract: A data input/output (I/O) device includes a plurality of data units and an I/O assembly. The plurality of data units is coupled to a global I/O (GIO) line through corresponding local I/O (LIO) lines and configured to receive or transmit a plurality of data groups through the corresponding LIO lines. At least one of the plurality of data units have a different operation speed. The I/O assembly performs serial/parallel conversion operations on the plurality of data groups including a high-speed data group and outputs results of the serial/parallel conversion operations. The high-speed data group is output from the at least one of the plurality of data units having the different operation speed.

Abstract: A logic chip and memory chip stacked over the logic chip, the logic chip having a first surface facing the memory chip and a second surface opposite to the first surface and including: first and second internal input/output circuit units for exchanging signals; first external input/output circuit unit for exchanging signals through first external input/output pads formed according to an external interface standard of a first memory over the second surface; and second external input/output circuit unit for exchanging signals through second external input/output pads formed according to an external interface standard of a second memory over the second surface, wherein semiconductor device operates in one of a first mode in which the first internal input/output circuit unit and the first external input/output circuit unit are enabled and a second mode in which the first and second internal input/output circuit units and the second external input/output circuit unit are enabled.

Abstract: A semiconductor memory device includes a plurality of first regions formed in a line-type and extending in a first direction, and a plurality of second regions and a plurality of third regions arranged between adjacent first regions in a zigzag manner.

Abstract: A logic chip and memory chip stacked over the logic chip, the logic chip having a first surface facing the memory chip and a second surface opposite to the first surface and including: first and second internal input/output circuit units for exchanging signals; first external input/output circuit unit for exchanging signals through first external input/output pads formed according to an external interface standard of a first memory over the second surface; and second external input/output circuit unit for exchanging signals through second external input/output pads formed according to an external interface standard of a second memory over the second surface, wherein semiconductor device operates in one of a first mode in which the first internal input/output circuit unit and the first external input/output circuit unit are enabled and a second mode in which the first and second internal input/output circuit units and the second external input/output circuit unit are enabled.

Abstract: A stack package may include a plurality of chips stacked with a plurality of layers; and a chip selection controller configured to provide a reference and chip selection control signal to the plurality of chips. Each chip may comprise: a reference signal controller configured to transmit the reference signal through a first line interconnecting the plurality of chips; a chip selection delay unit configured to control a delay timing point of the chip selection control signal to transmit the control result to each node of a second line interconnecting the plurality of chips; a delay-time-difference sensing unit configured to calculate a delay time difference between a signal applied to each node of the first and second line to generate chip selection information corresponding to the calculated delay time difference; and a memory unit configured to store the chip selection information.

Abstract: A stack package may include a plurality of chips stacked with a plurality of layers; and a chip selection controller configured to provide a reference and chip selection control signal to the plurality of chips. Each chip may comprise: a reference signal controller configured to transmit the reference signal through a first line interconnecting the plurality of chips; a chip selection delay unit configured to control a delay timing point of the chip selection control signal to transmit the control result to each node of a second line interconnecting the plurality of chips; a delay-time-difference sensing unit configured to calculate a delay time difference between a signal applied to each node of the first and second line to generate chip selection information corresponding to the calculated delay time difference; and a memory unit configured to store the chip selection information.