Patents by Inventor Seon Myung Kim

Seon Myung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105099
    Abstract: The embodiment relates to a data driving device for driving pixels of a display panel. In the data driving device, two adjacent DACs can have different gate loads for the same gray level value so that the fluctuation of the gate load according to the gray level value is reduced.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 28, 2024
    Applicant: LX SEMICON CO., LTD.
    Inventors: Da Sol WON, Kwang Myung KANG, Yong Min KIM, Dong Keun SONG, Jung Min CHOI, Seon Ho HONG
  • Patent number: 11103557
    Abstract: The present invention relates to a novel exenatide analogue, which is an exenatide analogue in which the first to fifteenth amino acids from the C-terminal of the amino acid sequence of exenatide are deleted and a fatty acid is conjugated. The present invention provides a short length exenatide exhibiting almost the same level of anti-diabetic effects compared with that of conventional exenatide and liraglutide, which is an anti-diabetic drug, and capable of reducing the preparation cost of exenatide.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: August 31, 2021
    Assignee: ANYGEN Co., Ltd.
    Inventors: San Ho Kim, Seon Myung Kim, Moon Young Park
  • Patent number: 10285979
    Abstract: A breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as active ingredient has been disclosed. Further, a breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as cyclin-dependent kinase (CDK) inhibitor, wherein said breast cancer is triple negative breast cancer (TNBC) and/or an estrogen receptor (ER) positive breast cancer including the tamoxifen-resistant estrogen receptor (ER) positive breast cancer has been disclosed.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: May 14, 2019
    Assignee: ANYGEN CO., LTD.
    Inventors: Jae il Kim, Seon-Myung Kim, San Ho Kim, Moon Young Park
  • Publication number: 20180147182
    Abstract: A breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as active ingredient has been disclosed. Further, a breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as cyclin-dependent kinase (CDK) inhibitor, wherein said breast cancer is triple negative breast cancer (TNBC) and/or an estrogen receptor (ER) positive breast cancer including the tamoxifen-resistant estrogen receptor (ER) positive breast cancer has been disclosed.
    Type: Application
    Filed: May 15, 2017
    Publication date: May 31, 2018
    Inventors: Jae il KIM, Seon-Myung KIM, San Ho KIM, Moon Young PARK
  • Publication number: 20170128541
    Abstract: The present invention relates to a novel exenatide analogue, which is an exenatide analogue in which the first to fifteenth amino acids from the C-terminal of the amino acid sequence of exenatide are deleted and a fatty acid is conjugated. The present invention provides a short length exenatide exhibiting almost the same level of anti-diabetic effects compared with that of conventional exenatide and liraglutide, which is an anti-diabetic drug, and capable of reducing the preparation cost of exenatide.
    Type: Application
    Filed: March 23, 2015
    Publication date: May 11, 2017
    Applicant: ANYGEN Co., Ltd.
    Inventors: Jae Il KIM, San Ho KIM, Seon Myung KIM, Moon Young PARK
  • Publication number: 20160313818
    Abstract: Disclosed are an apparatus, system, and method for manufacturing a touch panel, which form a bridge with transparent first oxide having conductivity and forms second oxide, which is robust to a high temperature and high humidity, on the bridge. The method includes forming a plurality of electrode parts in a display area of a substrate, forming a light blocking layer in a non-display area of the substrate, forming an electrode line on the light blocking layer, forming a line bridge by using transparent first oxide having conductivity, and forming second oxide on the first oxide for protecting the first oxide.
    Type: Application
    Filed: December 18, 2014
    Publication date: October 27, 2016
    Applicant: Jusung Engineering Co., Ltd.
    Inventors: Seon Myung KIM, Young Gi KIM, Kyung In MIN, Il Houng PARK, Chang Kyun PARK
  • Patent number: 8338221
    Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range betwe
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: December 25, 2012
    Assignee: Jusung Engineering Co., Ltd.
    Inventors: Chang Ho Lee, Hyung Dong Kang, Hyun Ho Lee, Yong Hyun Lee, Seon Myung Kim
  • Publication number: 20100136736
    Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range betwe
    Type: Application
    Filed: December 1, 2009
    Publication date: June 3, 2010
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Chang Ho LEE, Hyung Dong KANG, Hyun Ho LEE, Yong Hyun LEE, Seon Myung KIM