Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1) Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.

Abstract: A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Abstract: A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.

Abstract: A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

Abstract: A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.

Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1( Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: Provided is a method for manufacturing a film structure. The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor material, and irradiating the precursor material with microwave radiation to form the film structure.

Abstract: A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

Abstract: A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed.

Abstract: Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

Abstract: A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.

Abstract: An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.

Abstract: A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.

Abstract: The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

Abstract: A thin film transistor array panel includes a substrate, a gate line disposed on the substrate and having a gate electrode, a gate insulating layer disposed on the gate line, a data line disposed on the gate insulating layer and crossing the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor layer connected to the source and drain electrodes to form a channel, a light blocking layer disposed on the semiconductor layer to block light incident to the semiconductor layer, and a pixel electrode contacting the drain electrode.