Abstract: A display device includes a plurality of pixels arranged in a display area of a display panel, and a display driving circuit supplying data voltages and pixel driving control signals to the plurality of pixels to control an image display operation for each of the plurality of pixels. The display driving circuit further supplies an active control voltage that varies proportional to or inversely proportional to a change in temperature of the display panel to at least one thin film transistor included in the plurality of pixels.

Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: A semiconductor apparatus includes a parity operation circuit, a write latch circuit, a data processing circuit and a write path. The parity operation circuit generates a parity signal by performing an operation on operation source data. The write latch circuit generates a write parity signal by latching the parity signal according to a delayed write signal. The data processing circuit outputs write data as the operation source data in a write operation, and delays the operation source data by a time required for operation of the parity signal and outputs it as delayed data. The write path writes the delay data and the write parity signal to a memory area in the write operation.

Abstract: The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.

Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Abstract: In an embodiment, an error correction code circuit is provided. The error correction code circuit includes an error correction code engine and data processing circuit. The error correction code engine is configured to generate a second parity signal and syndrome information by performing an operation on operation source data and a first parity signal. The data processing circuit is configured to output write data as the operation source data and output an internally generated dummy parity signal as the first parity signal during a write operation, and to output read data as the operation source data and output a read parity signal as the first parity signal during a read operation.

Abstract: The present technology may include an error correction code engine configured to generate a parity bit and syndrome information by performing an operation according to operation source data, and a data processing circuit configured to simultaneously output the parity bit and first delay data, which is generated by delaying input data by a first time according to a write operation, simultaneously output the syndrome information and second delay data, which is generated by delaying input data by a second time according to a read operation, and to share substantially the same signal path in generating the first delay data and in generating the second delay data.

Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Abstract: A stacked semiconductor device including a plurality of semiconductor chips that are stacked and transfer signals through a plurality of through-electrodes, wherein at least one of the semiconductor chips comprises a first clock generation circuit suitable for generating first and second test clocks by dividing or buffering an external clock according to an operating information signal for indicating a high-speed test operation and a low-speed test operation; a first latch circuit suitable for latching a test control signal according to the first and second test clocks to generate first and second latched signals; and an input signal control circuit suitable for generating first and second internal control signals by re-latching the second latched signal according to the first test clock, and re-latching the first latched signal according to the second test clock.

Abstract: A stacked semiconductor device including a plurality of semiconductor chips that are stacked and transfer signals through a plurality of through-electrodes, wherein at least one of the semiconductor chips comprises a first clock generation circuit suitable for generating first and second test clocks by dividing or buffering an external clock according to an operating information signal for indicating a high-speed test operation and a low-speed test operation; a first latch circuit suitable for latching a test control signal according to the first and second test clocks to generate first and second latched signals; and an input signal control circuit suitable for generating first and second internal control signals by re-latching the second latched signal according to the first test clock, and re-latching the first latched signal according to the second test clock.