Patents by Inventor Seong Byun

Seong Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050147327
    Abstract: An image processing apparatus and method is provided. When a selected image out of a captured image cannot be stored or displayed at a designated zoom scale factor, the image processing apparatus enlarges the selected image into a desired size by using a pixel interpolation technique.
    Type: Application
    Filed: January 3, 2005
    Publication date: July 7, 2005
    Inventors: In Choi, Seong Byun
  • Publication number: 20050147293
    Abstract: Provided is an image processing apparatus and method for providing a more defined high-illuminance image, by converting a low-illuminance image into a high-illuminance image and at the same time, extracting the low-luminance level of the low-luminance image and differentiating an eliminated degree of the noise depending on the extracted low-illuminance level.
    Type: Application
    Filed: January 3, 2005
    Publication date: July 7, 2005
    Inventors: Hyun Lee, Seong Byun, Yu Kim
  • Publication number: 20050147318
    Abstract: An image processing apparatus and method is provided. The image processing apparatus discriminatively processes pixels located in a contour of an captured image according to the image's size and/or brightness information, thereby making it possible to remove a nose of the image and to sharpen the contour of the image.
    Type: Application
    Filed: January 3, 2005
    Publication date: July 7, 2005
    Inventors: Sang Park, Seong Byun
  • Publication number: 20050012150
    Abstract: The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line extending in a first direction and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer.
    Type: Application
    Filed: June 20, 2002
    Publication date: January 20, 2005
    Inventors: Jae-Seong Byun, Kun-Jong Lee, Hyun-Su Lim, Jong-Hwan Cha, Bae-Hyoun Jung
  • Patent number: 5923050
    Abstract: An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.
    Type: Grant
    Filed: January 24, 1996
    Date of Patent: July 13, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Jang, Jae-seong Byun, Hong-bin Jeon