Abstract: An image processing apparatus and method is provided. When a selected image out of a captured image cannot be stored or displayed at a designated zoom scale factor, the image processing apparatus enlarges the selected image into a desired size by using a pixel interpolation technique.

Abstract: Provided is an image processing apparatus and method for providing a more defined high-illuminance image, by converting a low-illuminance image into a high-illuminance image and at the same time, extracting the low-luminance level of the low-luminance image and differentiating an eliminated degree of the noise depending on the extracted low-illuminance level.

Abstract: An image processing apparatus and method is provided. The image processing apparatus discriminatively processes pixels located in a contour of an captured image according to the image's size and/or brightness information, thereby making it possible to remove a nose of the image and to sharpen the contour of the image.

Abstract: The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line extending in a first direction and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer.

Abstract: An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.