Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.

Abstract: A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.

Abstract: A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.

Abstract: A method of multi-stage substrate etching is provided.

Abstract: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

Abstract: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality.

Abstract: A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.

Abstract: A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.

Abstract: A method of multi-stage substrate etching is provided.

Abstract: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality.

Abstract: A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.