Abstract: The present invention discloses a MXene surface-modified with a metal alkoxide, which is formed by surface-modifying a MXene represented by the following Chemical Formula 1 with a metal alkoxide, in which the metal alkoxide is covalently bonded to the surface of the MXene and is present as a ligand. Mn+1 Xn??[Chemical Formula 1] Here, M is one or more transition metal elements selected from the group consisting of Sc, Ti, V, Cr, Mn, Y, Zr, Nb, Mo, Hf, and Ta, X is at least one of carbon and nitrogen, and n is an integer from 1 to 4.

Abstract: The present disclosure provides a large-area blank wherein no crystal-phase peak exists in the range of 2? 10-70, and the degree of crystallinity of 0.00% in an X-ray diffraction analysis pattern using CuK? rays, but crystalline particles having an average particle size of 10-70 nm are confirmed to be distributed in an amorphous SiO2—Li2O—Al2O3-series glass matrix from an SEM-based analysis, and the blank has a long-axis length of at least 60 mm and a thickness of at least 6 mm. The present disclosure has the following advantages: the blank is a workpiece having a large area and excellent processability such that processability can be improved during cutting, thereby reducing tool resistance and wear ratio, and increasing the tool lifespan; edge chipping can be reduced during processing; when fabricating multiple dental restorations successively by using a single blank, the blank use efficiency can be improved, and dental restoration productivity can be improved.

Abstract: Provided are a composition for treating or preventing recurrence of keloid comprising tauroursodeoxycholic acid as an active ingredient, and a method for treating keloid or preventing recurrence of keloid using the composition.

Abstract: Provided are an environmentally-friendly high-efficiency method of manufacturing an ester compound based on an esterification reaction using a salt ion-exchange method and an ester compound manufactured thereby. In the conventional esterification reaction, an ester was produced in low yields due to the hydrolysis (i.e., reverse reaction) caused by water, or it was required to continuously supply hydrochloric acid gas or use thionyl chloride, which is a hazardous material, and thus there were limitations in terms of environmental friendliness or cost. On the other hand, in the present invention, hydrochloric acid gas is continuously supplied using the salt ion-exchange method, and since magnesium sulfate acts as a dehydrating agent, the water generated in the esterification reaction is removed, and thus the occurrence of hydrolysis (i.e., reverse reaction) is suppressed and a conversion rate to the desired ester compound is increased.

Abstract: Provided are an environmentally-friendly high-efficiency method of manufacturing an ester compound based on an esterification reaction using a salt ion-exchange method and an ester compound manufactured thereby. In the conventional esterification reaction, an ester was produced in low yields due to the hydrolysis (i.e., reverse reaction) caused by water, or it was required to continuously supply hydrochloric acid gas or use thionyl chloride, which is a hazardous material, and thus there were limitations in terms of environmental friendliness or cost. On the other hand, in the present invention, hydrochloric acid gas is continuously supplied using the salt ion-exchange method, and since magnesium sulfate acts as a dehydrating agent, the water generated in the esterification reaction is removed, and thus the occurrence of hydrolysis (i.e., reverse reaction) is suppressed and a conversion rate to the desired ester compound is increased.

Abstract: Provided are a composition for treating or preventing recurrence of keloid comprising tauroursodeoxycholic acid as an active ingredient, and a method for treating keloid or preventing recurrence of keloid using the composition.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed, which can improve device characteristics by increasing a process margin between an active region and a storage node contact. The semiconductor device includes an active region, a device isolation film formed to have a lower height than the active region, and exposing an upper part of the active region, and a barrier pattern formed at a sidewall of the exposed active region of an upper part of the device isolation film.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed, which can improve device characteristics by increasing a process margin between an active region and a storage node contact. The semiconductor device includes an active region, a device isolation film formed to have a lower height than the active region, and exposing an upper part of the active region, and a barrier pattern formed at a sidewall of the exposed active region of an upper part of the device isolation film.

Abstract: A method of fabricating a SOI wafer using an isolation film as a polishing stopper, comprising the steps of: preparing a first and a second silicon substrates; implanting impurities into selected active regions of the first silicon substrate to a desired depth; etching the portion of the silicon substrate between the active regions to forming trenches having a desired depth; forming a first insulating layer of an oxide film on the first silicon substrate to be filled in the trenches; etching-back the first insulating layer to form a trench type isolation film; forming a second insulating layer of an oxide film on the first silicon substrate including the isolation film; bonding the first and the second silicon substrates to contact the second insulating layer with the second silicon substrate; firstly polishing the first silicon substrate by the vicinity of the portion of the first silicon substrate where the impurities are implanted; etching the polished first silicon substrate by using an etchant until the