Abstract: The present invention relates to an electrode for a lithium secondary battery, a method for preparing the same, an electrode assembly for a lithium secondary battery comprising the same, and a lithium secondary battery comprising the same, wherein the electrode comprises an electrode active material, an aqueous binder, a compound represented by Formula 1, and a compound represented by Formula 2. Formula 1 and Formula 2 are the same as set forth in the specification. The electrode for a lithium secondary battery improves the physical properties of the aqueous binder in a manner whereby a cross-linking reaction material is combined with the aqueous binder, so that the electrode can improve initial charge/discharge efficiency and the life span of a lithium secondary battery, preferably a lithium sulfur battery, and improve the area capacity of the electrode.

Abstract: A powertrain of a hybrid vehicle may include a planetary gear set, a first motor unit and a second motor unit. The planetary gear set may include three rotary members in which one rotary member is connected to an engine and another rotary member is connected to a front driveshaft. The first motor unit is connected to the remaining rotary member in the three rotary members, and the second motor unit is connected to a rear driveshaft and supplying power to the rear driveshaft.

Abstract: Disclosed are a real wood film, a manufacturing method thereof and a molded article comprising the same. The real wood film comprises: a real wood layer; and an elastic binder layer formed on the lower surface of the real wood layer, wherein the elastic binder layer comprises at least one of thermoplastic polyurethane (TPU) and acrylonitrile-butadiene-styrene (ABS) resins.

Abstract: A compound semiconductor device includes a first III-nitride buffer layer doped with carbon and/or iron, a second III-nitride buffer layer above the first III-nitride buffer layer and doped with carbon and/or iron, a first III-nitride device layer above the second III-nitride buffer layer, and a second III-nitride device layer above the first III-nitride device layer and having a different band gap than the first III-nitride device layer. A two-dimensional charge carrier gas arises along an interface between the first and second III-nitride device layers. The first III-nitride buffer layer has an average doping concentration of carbon and/or iron which is greater than that of the second III-nitride buffer layer. The second III-nitride buffer layer has an average doping concentration of carbon and/or iron which is comparable to or greater than that of the first III-nitride device layer. A method of manufacturing the compound semiconductor device is described.

Abstract: A power train system for a hybrid electric vehicle includes an engine; a first motor operating as a motor for driving the vehicle; a first power transmission mechanism connected between the engine and the first motor; a second power transmission mechanism connected between the first motor and a driving shaft of traveling wheels and transmitting engine power transmitted to the first motor or the engine power and power from the first motor to the driving shaft of the traveling wheels; and a second motor connected to the second power transmission mechanism by a fourth power transmission mechanism to transmit power to the second power transmission mechanism and outputting power for driving the vehicle.

Abstract: A powertrain for a vehicle includes an engine, a first motor serving as a motor for driving of a vehicle or serving as a generator, a first power transmission mechanism disposed between the engine and the first motor to transmit the power of the engine to the first motor or to cut off transmission of power between the engine and the first motor, a second power transmission mechanism disposed between the first motor and a driving shaft of running wheels to transmit the power of the first motor to the driving shaft of the running wheels or to cut off transmission of power between the first motor and the driving shaft of the running wheels, and a second motor connected to the second power transmission mechanism via a third power transmission mechanism to transmit power to the second power transmission mechanism and outputting power for driving the vehicle and transmit the power to the driving shaft of the running wheels.

Abstract: A powertrain of a hybrid vehicle may include a planetary gear set, a first motor unit and a second motor unit. The planetary gear set may include three rotary members in which one rotary member is connected to an engine and another rotary member is connected to a front driveshaft. The first motor unit is connected to the remaining rotary member in the three rotary members, and the second motor unit is connected to a rear driveshaft and supplying power to the rear driveshaft.

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract: An electrode for a fuel cell including a gas diffusion layer, and a catalyst layer bound to at least one surface of the gas diffusion layer and including a catalyst and a binder; and a fuel cell including the electrode.

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

Abstract: Provided is a poly silicon deposition device, which includes an electrode part, a silicon core rod part, a silicon core rod heating part, a gas supply pipe, and a gas injection part. The electrode part includes a first electrode and a second electrode which are disposed in a bottom of a reactor including a gas inlet for introducing source gas, a gas outlet for discharging gas, and a heating material inlet for introducing a heating material, and are spaced a predetermined distance from each other. The silicon core rod part receives electric current from the first electrode and transmits the electric current to the second electrode to generate heat. The silicon core rod heating part is spaced a predetermined distance from the silicon core rod part and surrounds the silicon core rod part and includes a heater receiving the heating material introduced through the heating material inlet of the reactor.

Abstract: There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Abstract: There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Abstract: A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.