Abstract: A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90° or less.

Abstract: A semiconductor device fabrication apparatus including a grinder comprising a grinding part, the grinding part configured to grind a first surface of a substrate, a laser emitter configured to emit a femtosecond pulse laser to the first surface of the substrate transferred from the grinder, and a mount configured to attach a die attach film to the first surface of the substrate transferred from the laser emitter, wherein the grinding part is configured to grind the first surface of the substrate, which has been introduced into the grinder, and the laser emitter is configured to emit the femtosecond pulse laser to the ground first surface of the substrate may be provided.

Abstract: A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region disposed on the first surface of the base substrate, in which the first wafer includes a first semiconductor chip region and a second semiconductor chip region adjacent to each other, each including a portion of the base substrate and a portion of the element region; forming a cutting pattern in the base substrate between the first semiconductor chip region and the second semiconductor chip region; grinding a part of the base substrate to form a second wafer from the first wafer; forming a stress relief layer on the second surface of the ground base substrate; and expanding the second wafer to separate the first semiconductor chip region and the second semiconductor chip region from each other.

Abstract: A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90° or less.

Abstract: A method for fabricating a semiconductor device includes: providing a first wafer including a base substrate having a first surface and a second surface facing each other, and an element region disposed on the first surface of the base substrate, in which the first wafer includes a first semiconductor chip region and a second semiconductor chip region adjacent to each other, each including a portion of the base substrate and a portion of the element region; forming a cutting pattern in the base substrate between the first semiconductor chip region and the second semiconductor chip region; grinding a part of the base substrate to form a second wafer from the first wafer; forming a stress relief layer on the second surface of the ground base substrate; and expanding the second wafer to separate the first semiconductor chip region and the second semiconductor chip region from each other.