Patents by Inventor Seong-Gyu Min

Seong-Gyu Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Production method for an ultra-low-dielectric-constant film, and an ultra-low-dielectric-constant film produced thereby
    Patent number: 8518530
    Abstract: The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: August 27, 2013
    Assignee: Industry-University Cooperation Foundation Sogang University
    Inventors: Hee-Woo Rhee, Hyun Sang Choi, Seong-Gyu Min, Bum Suk Kim, Bo ra Shin
  • PRODUCTION METHOD FOR AN ULTRA-LOW-DIELECTRIC-CONSTANT FILM, AND AN ULTRA-LOW-DIELECTRIC-CONSTANT FILM PRODUCED THEREBY
    Publication number: 20120064330
    Abstract: The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4.
    Type: Application
    Filed: February 19, 2010
    Publication date: March 15, 2012
    Inventors: Hee-Woo Rhee, Hyun Sang Choi, Seong-Gyu Min, Bum Suk Kim, Bo ra Shin