Abstract: According to the organometallic compound of the present invention and the thin film manufactured using the same, requirements of high volatility and excellent chemical/thermal stability are satisfied, and significantly improved thin-film deposition rates are exhibited even at low temperatures. In addition, property degradation due to by-products can be improved, excellent step coverage can be realized, and a thin film which, due to having a high dielectric constant, electrically satisfies the equivalent oxide thickness (EOT) requirement while having a thickness at which tunneling does not physically occur can be implemented.