Patents by Inventor Seong-Hee Nam

Seong-Hee Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline liquid crystal display device comprising a data line disposed between two separated portions of the gate line
    Patent number: 7428026
    Abstract: A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: September 23, 2008
    Assignee: LG Display Co., Ltd.
    Inventors: Jae-Young Oh, Seong-Hee Nam
  • Method for fabricating polycrystalline silicon liquid crystal display device
    Patent number: 7166501
    Abstract: A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: January 23, 2007
    Assignee: LG.Philips LCD Co., Ltd.
    Inventors: Jae-Young Oh, Kyoung-Mook Lee, Seong-Hee Nam
  • Polycrystalline liquid crystal display device and method of fabricating the same
    Publication number: 20060256251
    Abstract: A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and
    Type: Application
    Filed: July 20, 2006
    Publication date: November 16, 2006
    Inventors: Jae-Young Oh, Seong-Hee Nam
  • Polycrystalline liquid crystal display device and method of fabricating the same having simultaneously formed gate, source and drain electrodes
    Patent number: 7098971
    Abstract: A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: August 29, 2006
    Assignee: LG.Philips LCD Co., Ltd.
    Inventors: Jae-Young Oh, Seong-Hee Nam
  • Method for fabricating polycrystalline silicon liquid crystal display device
    Publication number: 20050009249
    Abstract: A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
    Type: Application
    Filed: June 16, 2004
    Publication date: January 13, 2005
    Inventors: Jae-Young Oh, Kyoung-Mook Lee, Seong-Hee Nam
  • Polycrystalline liquid crystal display device and method of fabricating the same
    Publication number: 20040263704
    Abstract: A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and
    Type: Application
    Filed: May 19, 2004
    Publication date: December 30, 2004
    Applicant: LG.Philips LCD Co., Ltd.
    Inventors: Jae-Young Oh, Seong-Hee Nam