Abstract: A semiconductor device may include a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least a first side of the gate electrode on the active pattern, and a source/drain contact connected to the source/drain region on the first side of the gate electrode. The source/drain contact may include first, second, and third layers which are sequentially stacked, the first to third layers including the same metal, with each layer having a respective crystal orientation. The source/drain contact may include a first grain boundary at an interface between the first layer and the second layer, and a second grain boundary at an interface between the second layer and the third layer.

Abstract: A semiconductor device is provided. The semiconductor device includes: a semiconductor device including: an active pattern extending in a first direction; a gate structure including a gate electrode extending in a second direction and a gate spacer on the active pattern, wherein the gate electrode and the gate spacer are spaced apart from each other in the first direction; a source/drain pattern on the active pattern; a contact barrier layer on the source/drain pattern; and a contact filling layer on the contact barrier layer. An uppermost point of the contact barrier layer is between an upper surface of the contact filling layer and a lower surface of the contact filling layer, and outer walls of the contact barrier layer and outer walls of the contact filling layer extend along a common plane.

Abstract: A semiconductor device may include an active pattern extending in a first direction, a gate structure which is placed on the active pattern to be spaced apart from each other in the first direction, and includes a gate electrode and a gate spacer, the gate electrode extending in a second direction intersecting the first direction, a gate contact on the gate structure, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a via plug on the source/drain contact. An upper surface of the gate contact and a second upper surface of the via plug may be placed on the same plane. A lower surface of the gate contact and a lower surface of the via plug may be different in height, on the basis of an upper surface of the active pattern.

Abstract: A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

Abstract: A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.