Abstract: Disclosed are a separator for fuel cells capable of minimizing the volume of a system and the use of sealants, and a stack for fuel cells, more particularly, a stack for solid oxide fuel cells, including the same. Specifically, by adding a metal sheet having a specific shape, position and size to the separator, the stress applied to the sealant can be uniformized, and thus the oxidizing agent and fuel can be separated and electrically isolated using only a piece of sealant. Therefore, the stack for fuel cells is characterized in that there is no variation in temperature, reactant concentration, power, or the like between respective unit cells, so delamination and microcracks do not occur, the volume is minimized, and the power density per unit volume is very high.

Abstract: Discussed is a cosmetic dispensing system including a terminal and a cosmetic dispenser in near field communication with the terminal, including a memory storing applications for dispensing the cosmetic, a display receiving a command for inputting a cosmetic provision amount and a command for selecting a cosmetic dispensing icon, and a controller processing the command for inputting the cosmetic provision amount and the command for selecting the cosmetic dispensing icon received form the display. The command for inputting the cosmetic provision amount is data determined based on a number of times of use of cosmetics inputted by a user.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: The disclosure relates to engineered ketoreductase polypeptides and processes of using the polypeptides for production of phenylephrine.

Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.