Abstract: An apparatus for treating a substrate includes a housing having a process space inside and having an exhaust hole formed through the housing, a support unit that supports the substrate in the process space, and an exhaust unit that is provided at the bottom of the housing and that exhausts the process space. The exhaust unit includes a body having a buffer space inside and having a through-hole formed through the body, the buffer space connecting to the process space, and an exhaust pipe that discharges gas in the buffer space. The support unit includes a support plate that supports the substrate in the process space and a support shaft connected with the support plate and inserted into the through-hole and the exhaust hole, the support shaft having a smaller diameter than the through-hole.

Abstract: Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region.

Abstract: A high voltage integrated device includes a drift region in a substrate, a source region in the substrate and spaced apart from the drift region, a drain region in the drift region, a trench insulation layer in the drift region between the source region and the drain region, and a gate insulation layer and a gate electrode sequentially stacked on the substrate between the source region and the drift region and extending onto the trench insulation layers. The upper sidewall of the first trench insulation layer has a first angle to the bottom surface thereof and the lower sidewall of the first trench insulation layer has a second angle, which is smaller than the first angle, to the bottom surface thereof.

Abstract: A method and apparatus for notifying a mobile user of a push-to-talk (PTT) communication call signal in a mobile communication system are provided in which a caller's mobile terminal transmits the PTT communication call signal, including identifying information of a receiver's mobile terminal, through a PTT server to a receiver's mobile terminal, and the receiver's mobile terminal notifies the receiver of reception of the PTT communication call signal by means of a PTT communication start sound set by the receiver.

Abstract: A method for fabricating a contact of a semiconductor device is disclosed, which efficiently removes an etching damage layer and residual layers when forming a contact of a semiconductor memory device, thereby improving a motion characteristic of the device. The method for fabricating a contact of a semiconductor device includes the steps of forming an insulating layer on a semiconductor substrate, forming a contact hole by selectively etching the insulating layer, so that a surface of the semiconductor substrate is exposed, primarily removing reaction by-products as well as a plasma damage layer at a bottom surface of a contact hole, with a pressure higher than that during the formation of the contact hole, and with a plasma source power and a bias power lower than those during the formation of the contact hole, and secondarily removing a residual plasma damage layer remaining after the primary removing, by an anisotropic etching with a light etching process.

Abstract: A method of forming an integrated circuit capacitor includes the steps of forming an insulating layer on an integrated circuit substrate, and forming a conductive layer on the insulating layer opposite the integrated circuit substrate. A patterned ozone tetraethylorthosilicate undoped silicate layer is formed on the conductive layer, and conductive spacers are formed along sidewalls of the ozone tetraethylorthosilicate undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer in the conductive spacers.

Abstract: of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.