Abstract: A duty cycle corrector (DCC) includes a duty corrector circuit configured to adjust a duty of an input signal to output a duty-adjusted signal; a duty detector circuit configured to generate a correction code associated with the adjustment of the duty, based on a charge pump operation and a counting operation; and a timing controller configured to generate a first control signal associated with the charge pump operation and a second control signal associated with the counting operation in synchronization with a first clock.

Abstract: A semiconductor memory device that includes a command decoder, a refresh controller, an oscillator and a delay unit. The command decoder generates a self refresh command, and the oscillator generates an oscillation signal. The refresh controller generates a refresh control signal and a recovery signal in response to the self refresh command and the oscillation signal. The delay unit transitions internal nodes included in the delay unit that are not transitioned during a refresh period in response to the refresh control signal and the recovery signal.

Abstract: A clock synchronization circuit includes a delay-locked loop (DLL) and a delay-locked control unit. The DLL is configured to generate an output clock signal by delaying an input clock signal by a delay time, and to execute a delay-locking operation in which the delay time is adjusted to a locked state according to a comparison between the output clock signal and the input clock signal. The delay-locked control unit configured to detect the locked state of the DLL, and to control the DLL based on the determined locked state.

Abstract: A semiconductor memory device that includes a command decoder, a refresh controller, an oscillator and a delay unit. The command decoder generates a self refresh command, and the oscillator generates an oscillation signal. The refresh controller generates a refresh control signal and a recovery signal in response to the self refresh command and the oscillation signal. The delay unit transitions internal nodes included in the delay unit that are not transitioned during a refresh period in response to the refresh control signal and the recovery signal.

Abstract: A squelch detection circuit for high-speed serial communication includes: an input level shifter configured to receive signals inputted through signal lines and shift the received signals to a predetermined potential level; a comparator configured to receive signals outputted from the input level shifter, and compares the received signals to determine whether data signals are noise or signal components; and a reset signal generator configured to receive the signals outputted from the input level shifter, convert the received signals into a single signal, and then generate a reset signal for an elastic buffer. The squelch detection circuit may detect a squelch state and provide a reset value for an elastic buffer in a USB 2.0 interface, and may reduce power consumption as much as possible in a suspend mode.

Abstract: A squelch detection circuit for high-speed serial communication includes: an input level shifter configured to receive signals inputted through signal lines and shift the received signals to a predetermined potential level; a comparator configured to receive signals outputted from the input level shifter, and compares the received signals to determine whether data signals are noise or signal components; and a reset signal generator configured to receive the signals outputted from the input level shifter, convert the received signals into a single signal, and then generate a reset signal for an elastic buffer. The squelch detection circuit may detect a squelch state and provide a reset value for an elastic buffer in a USB 2.0 interface, and may reduce power consumption as much as possible in a suspend mode.