Abstract: Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.

Abstract: Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.

Abstract: Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.

Abstract: A wave guided alternating phase shift mask (WGAPSM) includes a substrate transparent to light from an exposure light source and a waveguide pattern formed on the substrate to define a plurality of transparent regions that are regularly arranged. The transparent regions defined by the waveguide pattern include a plurality of shift transparent regions formed of recess regions of the substrate and a plurality of non-shift transparent regions alternatively arranged with the shift transparent regions. The provided WGAPSM minimizes an error of critical dimension difference and an X-effect while securing a large process margin and not generating opaque defects. A fabricating method for the provided WGAPSM is also provided.

Abstract: A wave guided alternating phase shift mask (WGAPSM) includes a substrate transparent to light from an exposure light source and a waveguide pattern formed on the substrate to define a plurality of transparent regions that are regularly arranged. The transparent regions defined by the waveguide pattern include a plurality of shift transparent regions formed of recess regions of the substrate and a plurality of non-shift transparent regions alternatively arranged with the shift transparent regions. The provided WGAPSM minimizes an error of critical dimension difference and an X-effect while securing a large process margin and not generating opaque defects. A fabricating method for the provided WGAPSM is also provided.

Abstract: Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.