Abstract: An organic light emitting display apparatus includes a substrate; a thin film transistor which is disposed over the substrate; a first electrode which is disposed over the substrate and electrically connected to the thin film transistor; a passivation layer which covers the thin film transistor and contacts a predetermined region of an upper surface of the first electrode; an intermediate layer which is disposed over the first electrode, includes an organic emission layer, and contacts a predetermined region of the passivation layer; and a second electrode which is disposed over the intermediate layer.

Abstract: A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first and second directions perpendicular to each other. The embodiment also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the first, second, and third display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the one side in the first direction.

Abstract: A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.

Abstract: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.

Abstract: A method of manufacturing a display device is disclosed. In one embodiment, the method includes: i) forming a semiconductor layer where a plurality of crystallized areas and a plurality of noncrystallized areas are alternately arranged on a substrate, ii) aligning the substrate based on a difference in contrast ratio between the crystallized and noncrystallized areas and iii) performing a photo process or a photolithography process.

Abstract: An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.

Abstract: A laser irradiation apparatus for irradiating a laser beam to a semiconductor layer including a plurality of pixel areas, the apparatus includes a laser generator generating the laser beam, and an optical switching unit time-dividing the laser beam generated from the laser generator and transmitting a plurality of time-divided laser beams to a plurality of optical systems. The apparatus includes a first optical system of the plurality of optical systems that receives a first time-divided laser beam and irradiates a first laser slit beam along a first irradiation direction, and a second optical system of the plurality of optical systems that receives a second time-divided laser beam and irradiates a second laser slit beam along a second irradiation direction that is parallel with the first irradiation direction. The first laser slit beam and the second laser slit beam crystallize partial areas at a same location in the respective pixel areas.

Abstract: A laser irradiation apparatus provides a laser beam along a scan direction to a semiconductor layer including a plurality of pixel areas. The laser irradiation apparatus includes at least one laser mask including a plurality of slit groups respectively facing portions of the plurality of pixel areas and a laser generator generating the laser beam that pass through the plurality of slit groups of the at least one laser mask.

Abstract: Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.

Abstract: A laser crystallization apparatus for crystallizing a thin film of a substrate, the laser crystallization apparatus includes a laser beam emitting unit configured to scan the substrate in a predetermined direction with a laser beam, a stage configured to support the substrate, a fixing part disposed on a first part of the stage, the fixing part having a shape corresponding to a corner of the substrate, and a driving unit configured to lift a second part of the stage to be higher than the first part of the stage, the substrate on the stage being configured to slide toward and engage with the fixing part.

Abstract: The present invention provides a display device and a method of driving the same.

Abstract: A flat panel display according to an exemplary embodiment of the present invention includes a transistor disposed on a substrate, a planarizing layer having a trench, which includes a bottom surface and a side surface, disposed on the transistor, a reflective film disposed in the trench, a pixel electrode disposed on the reflective film and connected to the transistor, a partition wall having an opening to expose a portion of the pixel electrode, an organic light emitting member disposed on the reflective film, and a common electrode disposed on the organic light emitting member.