Patents by Inventor Seong-II Kim

Seong-II Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240296982
    Abstract: The present invention relates to a bobbin that can be used for a slim magnetic component. A bobbin for a magnetic part, according to one embodiment of the present invention, comprises: a first bobbin which has a space for accommodating a magnetic core therein, and which includes a pair of isolation protrusions disposed to be opposite to each other, so as to separate a first region and a second region; and a second bobbin including a coil-loading groove in which a first coil and a second coil are loaded while wound around the first bobbin, and terminals formed on the outside of the coil-loading groove in respective quadrant regions with respect to the coil-loading groove.
    Type: Application
    Filed: June 17, 2022
    Publication date: September 5, 2024
    Inventors: Jung Eun LEE, In Seong SOHN, Young Hwan JUNG, Sang II KIL, Ki Young KIM
  • Publication number: 20230054026
    Abstract: Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.
    Type: Application
    Filed: August 19, 2022
    Publication date: February 23, 2023
    Inventors: Hyun Wook JUNG, Seong II KIM, Hae Cheon KIM, Youn Sub NOH, Ho Kyun AHN, Sang Heung LEE, Jong Won LIM, Sung Jae CHANG, II Gyu CHOI
  • Publication number: 20180033013
    Abstract: An electronic device and a method of payment by the electronic device are provided. The electronic device includes a local wireless communication circuit, a first biometric sensor and a second biometric sensor, a security module configured to store payment information corresponding to a payment card, a processor electrically connected to the first biometric sensor, the second biometric sensor, the local wireless communication circuit, and the security module, and a memory electrically connected to the processor, wherein the memory is configured to store instructions that cause the processor to select at least one of the first biometric sensor or the second biometric sensor, based on a security policy of an issuer of the payment card or a security policy of the payment card, authenticate a user by using the selected biometric sensor, and if the authentication is successful, transmit the payment information to an external device through the local wireless communication circuit.
    Type: Application
    Filed: July 28, 2017
    Publication date: February 1, 2018
    Inventors: Yong Seok PARK, Seong II KIM, In Ho KIM, Tae Yun KIM, Seung Won OH, Ji Su OH, Yong Wan LEE, You Na LEE, Dong Ho JANG, Jae Man CHO
  • Publication number: 20140159115
    Abstract: A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode. The second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode to be in contact with the third insulating layer. The first insulating layer and another portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode to be in contact with the second insulating layer.
    Type: Application
    Filed: June 3, 2013
    Publication date: June 12, 2014
    Inventors: Jong-Won LIM, Hokyun AHN, Woojin Chang, Dong Min Kang, Seong-II Kim, Sang-Heung Lee, Hyung Sup Yoon, Chull Won Ju, Hae Cheon Kim, Jae Kyoung Mun, Eun Soo Nam
  • Publication number: 20130146944
    Abstract: Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.
    Type: Application
    Filed: August 23, 2012
    Publication date: June 13, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyung Sup YOON, Byoung-Gue Min, Jong Min Lee, Seong-II Kim, Dong Min Kang, Ho Kyun Ahn, Jong-Won Lim, Jae Kyoung Mun, Eun Soo Nam
  • Publication number: 20100254108
    Abstract: A display device includes a display panel on which an image is displayed, and a driving board. The driving board includes a substrate, a first multi-layer ceramic condenser disposed on the substrate and to which a first current is supplied, and a second multi-layer ceramic condenser disposed substantially parallel with the first multi-layer ceramic condenser and to which a second current is supplied. The first current and the second current are supplied to the first multi-layer ceramic condenser and the second multi-layer ceramic condenser, respectively, in opposite directions.
    Type: Application
    Filed: October 22, 2009
    Publication date: October 7, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seong-II KIM, Jung-Hoon KU, In-Han JEON, Jun-Ho HWANG, Eun-Jeong KIM, Choong-Hwa KIM, Ri-Na YOU
  • Publication number: 20100133586
    Abstract: Provided are a heterojunction bipolar transistor and a method of forming the same.
    Type: Application
    Filed: May 8, 2009
    Publication date: June 3, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Byoung-Gue MIN, Jong-Min Lee, Seong-II Kim, Kyung-Ho Lee, Hyung-Sup Yoon, Eun-Soo Nam
  • Publication number: 20090140439
    Abstract: Provided are a chip, a chip stack, and a method of manufacturing the Same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.
    Type: Application
    Filed: February 2, 2009
    Publication date: June 4, 2009
    Inventors: Chull Won Ju, Byoung Gue Min, Seong II Kim, Jong Min Lee, Kyung Ho Lee, Young II Kang
  • Publication number: 20050086501
    Abstract: The present invention relates to the information protection of digital content transferred by streaming and download service through wire or wireless Internet network. The information protection system in this invention suggests a drastic prevention method of copyrights infringement such as illegal copy and unauthorized distribution of digital content, by using of the encryption, decryption, distribution, and authentication technologies. This invention suggests the control technology of general viewer program, not the specific viewer program for information protection, using a network filter driver for streaming and file system filter driver for download service. The main function of network and file system filter driver is the filtering operation such as a hooking, changing, decrypting, and restoring of message and data packet, and transferring to the viewer program.
    Type: Application
    Filed: January 10, 2003
    Publication date: April 21, 2005
    Inventors: Je-Hak Woo, Hwan-Chul Lee, Sang-Young Cho, Seong-Ho Jeong, Young-Soo Ha, Seog-Kyoon Shin, Seong-II Kim
  • Patent number: 6667253
    Abstract: An alignment mark and an exposure alignment system and method using the alignment mark for aligning wafers are described. The alignment mark is formed of a plurality of mesa or trench type unit marks that are aligned in an inline pattern within an underlying layer under a layer to which a chemical mechanical polishing process is applied to form an alignment signal during an alignment process, thereby preventing a dishing phenomenon caused by the chemical mechanical process.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: December 23, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won Song, Seong-II Kim, Sang-II Han, Chang-Hoon Lee, Choung-Hee Kim
  • Publication number: 20020094679
    Abstract: An alignment mark and an exposure alignment system and method using the alignment mark for aligning wafers are described. The alignment mark is formed of a plurality of mesa or trench type unit marks that are aligned in an inline pattern within an underlying layer under a layer to which a chemical mechanical polishing process is applied to form an alignment signal during an alignment process, thereby preventing a dishing phenomenon caused by the chemical mechanical process.
    Type: Application
    Filed: July 16, 2001
    Publication date: July 18, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Won Song, Seong-II Kim, Sang-II Han, Chang-Hoon Lee, Choung-Hee Kim