Abstract: A multilayer electronic component includes a body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction and a cover portion disposed on one surface and the other surface of the capacitance forming portion in the first direction, and external electrodes disposed on the body, wherein a secondary phase including Al is disposed at an interface between the internal electrode and the dielectric layer, and the ratio of an area occupied by the secondary phase to an area of the capacitance forming portion is 0.03% or more and 0.40% or less.

Abstract: A semiconductor device including: a gate structure in which conductive layers and insulating layers are alternately stacked; contact plug extending in a stacking direction of the insulating layers through the gate structure; first spacer layers each located between the conductive layer and the contact plug; and second spacer layers each located between the contact plug and the first spacer layer.

Abstract: A multilayer electronic component including: a body including a dielectric layer and internal electrodes; and external electrodes disposed outside the body and connected to the internal electrodes, wherein 1.5?Hfs/Hfc?5.0 when the internal electrode includes hafnium (Hf), Hfc indicates an average Hf content (at %) in a center of the internal electrode, and Hfs indicates an average Hf content (at %) in the internal electrode, measured from the center of the internal electrode to an interface thereof in contact with the dielectric layer.

Abstract: A method for producing a lead-free X-ray shielding material using a bismuth halide compound is provided, the method including a first step of producing porous PDMS (Polydimethylsiloxane); a second step of producing a mixed solution of the bismuth halide compound and THF; and a third step of immersing the porous PDMS into the mixed solution such that the bismuth halide compound is loaded into the porous PDMS to produce a bismuth halide compound-PDMS composite material.

Abstract: Provided herein are a method for producing a hydrocarbon adsorption catalyst includes dealuminated zeolite by heat-treating a zeolite in moisture-containing air at a first temperature to remove a portion of aluminum included in the zeolite, and supporting a metal on a carrier including the zeolite after the heat-treating and a hydrocarbon adsorption catalyst prepared using the same method. The metal-supported support may be additionally heat-treated in moisture-containing air at a second temperature that is higher than the first temperature.

Abstract: A semiconductor device includes a substrate with a conductive pattern. A semiconductor die is electrically connected to the substrate and both the semiconductor die and the substrate are at least partially covered by a package body. In some examples, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In some examples, through-mold vias are included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. In some examples, an interposer is electrically connected to the through-mold vias and may be covered by the package body and/or disposed in spaced relation thereto. In some examples, the interposer may not be electrically connected to the through-mold vias but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

Abstract: A method for producing a lead-free X-ray shielding material using bismuth iodide is provided, the method including a first step of producing porous PDMS (Polydimethylsiloxane); a second step of producing a mixed solution of BiI3 and THF; and a third step of immersing the porous PDMS into the mixed solution such that the BiI3 is loaded into the porous PDMS to produce a BiI3-PDMS composite material.

Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: SiGe photodiode for crosstalk reduction. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes. The plurality of pixels are configured to receive an incoming light through an illuminated surface of the semiconductor material. Each pixel includes a first photodiode comprising a silicon (Si) material; and a second photodiode having the Si material and a silicon germanium (SiGe) material.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The light emitting sheet excellent in light guiding performance according to an embodiment of the present disclosure may include: a base film; and a light guide pattern portion in which a pattern set on a surface of the base film is repeatedly formed, wherein the light guide pattern portion has a hexagonal shape.

Abstract: An apparatus for providing brain lesion information based on an image includes a magnetic resonance angiography (MRA) provider configured to provide an environment capable of displaying 3D time-of-flight magnetic resonance angiography (3D TOF MRA) using user input, a brain lesion input unit configured to generate and manage a brain lesion image, a maximum intensity projection (MIP) converter configured to configure MIP image data including at least one image frame corresponding to a projection position of the brain lesion image, a noise remover configured to remove noise of brain lesion information and to configure corrected MIP image data, from which the noise is removed, and an MRA reconfiguration unit configured to reconfigure a corrected brain lesion image by back-projecting the corrected MIP image data.