Patents by Inventor Seong Jin Park

Seong Jin Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020100409
    Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
    Type: Application
    Filed: July 9, 1999
    Publication date: August 1, 2002
    Inventors: JIN JANG, SOO-YOUNG YOON, JAE-YOUNG OH, WOO-SUNG SHON, SEONG-JIN PARK
  • Publication number: 20020098297
    Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.
    Type: Application
    Filed: July 9, 1999
    Publication date: July 25, 2002
    Inventors: JIN JANG, SOO-YOUNG YOON, JAE-YOUNG OH, WOO-SUNG SHON, SEONG-JIN PARK
  • Patent number: 6214430
    Abstract: A disc recording medium that is capable of being rotated at a high speed to improve an information transfer rate. The recording medium has a residual stress acting as a tensile force. An annular reinforcing member having a temperature coefficient different from the disc and adapted to be bonded to the disc is used in the recording medium.
    Type: Grant
    Filed: February 11, 1999
    Date of Patent: April 10, 2001
    Assignee: LG Electronics Inc.
    Inventors: Soo Kyung Kim, Seong Jin Park