Abstract: A polarizing plate and an optical display apparatus are disclosed. The polarizing plate includes a polarizer; and a retardation layer stack formed on one surface of the polarizer, wherein the retardation layer stack includes a second retardation layer, a first adhesive layer, and a first retardation layer sequentially stacked from the one surface of the polarizer, the first adhesive layer has a modulus of 1×105 Pa to 1×106 Pa at 25° C., and the second retardation layer and the first adhesive layer satisfy Relation 1.

Abstract: A heat pump system for a vehicle is provided to improve cooling and heating performance by applying a gas injection device selectively operating during air conditioning of a vehicle interior by increasing a flow rate of the refrigerant circulating in a refrigerant line of the heat pump system. The heat pump system for a vehicle may include: a compressor, a first condenser, a receiver dryer, a second condenser, an evaporator, a gas injection device, a refrigerant connection line, and a chiller. The flow of the refrigerant is controlled according to at least one mode for adjusting a temperature of a vehicle interior or adjusting a temperature of a battery module.

Abstract: Disclosed are a three-primary-light emitting stretchable mixed composition made of a polymer blend of a red/green/blue (RGB) light emitting polymer and a nonpolar elastomer, a stretchable light emitting mixed film prepared using the same and a stretchable polymer light emitting diode (PLED) device including the same. The stretchable light emitting mixed film according to the present disclosure can be composed of multidimensional nanodomains of a light emitting polymer interconnected within an elastomer to achieve efficient light emission under strain. The stretchable PLED device can exhibit a luminance of 1,000 cd/m2 or more at a low turn-on voltage (<5 Von) and can maintain stable light emitting performance up to a strain of 100% even after 1,000 repeated stretching cycles.

Abstract: Provided is a method of producing a transition metal dichalcogenide fiber. The method of producing a transition metal dichalcogenide fiber according to the present invention includes: spinning a spinning solution containing a transition metal dichalcogenide in a coagulation solution to obtain a transition metal dichalcogenide fiber, wherein the spinning solution has liquid crystallinity by the transition metal dichalcogenide.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1, and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 )

Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract: A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period ?o in the trench by the annealing.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 ) ]

Abstract: A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period ?o in the trench by the annealing.

Abstract: According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.

Abstract: According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.