Abstract: An on-die termination circuit, which is coupled to a pad and included in a semiconductor memory device, for reducing an interference caused by a signal reflection phenomenon, includes a pull-up block coupled between an output node and a supply voltage; a pull-down block coupled between the output node and a ground; and a control block for receiving an ODT control signal to simultaneously activate the pull-up block and the pull-down block.

Abstract: The present invention relates to a resistance calibration circuit to correct a resistance variation in an output terminal of a semiconductor device. The resistance calibration circuit according to the present invention includes: a correction code generator for generating a plurality of push-up code signals and a plurality of pull-down code signals based on an external reference resistor, wherein a reference voltage is applied to the correction code generator; a push-up decoder for decoding the plurality of push-up code signals from the correction code generator; a pull-down decoder for decoding the plurality of pull-down code signals from the correction code generator; and a resistance adjustor for receiving a push-up signal from the push-up decoder and a pull-down signal from the pull-down decoder and for turning on/off a plurality of inner transistors.

Abstract: An on-DRAM termination resistance control circuit is capable of controlling resistance of an IC termination and minimizing area for the resistance control circuit by using a simplified circuit scheme. The on-DRAM termination resistance control circuit includes a push-up resistance adjusting unit, a pull-down resistance adjusting unit and resistance adjustment control unit. The push-up resistance adjusting unit adjusts resistances of a first and a second inner resistors based on an external reference resistor. The pull-down resistance adjusting unit adjusts a resistance of a third resistor based on the second inner resistor that is adjusted by adjustment of the push-up resistance control unit. The resistance adjustment control unit controls to alternatively repeat the operation of the push-up resistance adjusting unit and the pull-down resistance adjusting unit for a predetermined number of adjustment times.

Abstract: The present invention relates to a resistance calibration circuit to correct a resistance variation in an output terminal of a semiconductor device. The resistance calibration circuit according to the present invention includes: a correction code generator for generating a plurality of push-up code signals and a plurality of pull-down code signals based on an external reference resistor, wherein a reference voltage is applied to the correction code generator; a push-up decoder for decoding the plurality of push-up code signals from the correction code generator; a pull-down decoder for decoding the plurality of pull-down code signals from the correction code generator; and a resistance adjustor for receiving a push-up signal from the push-up decoder and a pull-down signal from the pull-down decoder and for turning on/off a plurality of inner transistors.