Abstract: Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.

Abstract: Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.

Abstract: A method for manufacturing a semiconductor single crystal uses a Czochralski (CZ) process in which a seed crystal is dip into a melt of semiconductor raw material and dopant received in a crucible, and the seed crystal is slowly pulled upward while rotated to grow a semiconductor single crystal. Here, a cusp-type asymmetric magnetic field having different upper and lower magnetic field intensities based on ZGP (Zero Gauss Plane) where a vertical component of the magnetic field is 0 is applied to the crucible such that a specific resistance profile, theoretically calculated in a length direction of crystal, is expanded in a length direction of crystal. Thus, thickness of a diffusion boundary layer near a solid-liquid interface is increased to increase an effective segregation coefficient of dopant, thereby expanding a specific resistance profile in a length direction of crystal, increasing a prime length of the single crystal, and improving productivity.