Abstract: A composition for enhancing protein strength according to the present invention contains an aminosilane compound capable of covalent binding with a protein of hair, scalp, skin, nails, leather, or textile, so that the protein and the amino silane compound form a covalent bond, and thus the composition can improve the protein strength enhancement effect and maximize the semi-permanent protein strength enhancement effect.

Abstract: Provided are a magnetic tunnel junction device and a method of fabricating the same. The magnetic tunnel junction device includes a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulating layer disposed on the free magnetic layer. The heavy metal layer includes platinum (Pt), the free magnetic layer includes cobalt (Co), a magnetization state of the free magnetic layer has an easy-cone state, the free magnetic layer has a positive first-order perpendicular magnetic anisotropy constant and a negative second-order perpendicular magnetic anisotropy constant, and the tunnel insulating layer includes magnesium oxide (MgO).

Abstract: A multilayer thin film for magnetic random access memory that includes thin platinum layers and thin cobalt-copper layers, and more particularly, to a multilayer thin film having magnetic layers including non-magnetic material copper that replaces a portion of the magnetic material cobalt.

Abstract: Provided are a magnetic tunnel junction device and a method of fabricating the same. The magnetic tunnel junction device includes a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulating layer disposed on the free magnetic layer. The heavy metal layer includes platinum (Pt), the free magnetic layer includes cobalt (Co), a magnetization state of the free magnetic layer has an easy-cone state, the free magnetic layer has a positive first-order perpendicular magnetic anisotropy constant and a negative second-order perpendicular magnetic anisotropy constant, and the tunnel insulating layer includes magnesium oxide (MgO).

Abstract: A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Abstract: The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers.

Abstract: A multilayer thin film for magnetic random access memory that includes thin platinum layers and thin cobalt-copper layers, and more particularly, to a multilayer thin film having magnetic layers including non-magnetic material copper that replaces a portion of the magnetic material cobalt.

Abstract: A multilayer thin film for magnetic random access memory that includes thin platinum layers and thin cobalt-copper layers, and more particularly, to a multilayer thin film having magnetic layers including non-magnetic material copper that replaces a portion of the magnetic material cobalt.

Abstract: Provided is a method for manufacturing an Nd—Fe—B-based permanent magnet having an improved coercive force while reducing the amount of Dy used. A method for manufacturing a permanent magnet according to an embodiment of the present invention may comprise the steps of: preparing powder including Nd, Fe, B, and Cu; preparing a shaped body by forming a specific magnetic field in the powder; sintering the shaped body at a specific sintering temperature; and subjecting the sintered, shaped body to annealing at a annealing temperature determined according to the content of Cu.

Abstract: A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Abstract: Provided is a fabrication method of a rare earth-based sintered magnet including: a) a first doping step of mixing and sintering a first doping material including a first heavy rare earth compound with a rare earth-based magnet raw material powder to fabricate a first doped sintered body; and b) a second doping step of forming a coating layer of a second doping material including a second heavy rare earth compound on a surface of the first doped sintered body and performing a heat-treatment to fabricate a second doped sintered body.

Abstract: The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers.

Abstract: Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.

Abstract: Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.

Abstract: The present invention relates generally to the magnetic information storage technology, and particularly, to magnetic recording disc drives including a sensor having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure or magnetic random access memory device including a magnetic memory element(corresponding to a capacitor of DRAM) having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure. More particularly, the present invention relates to a spin valve magnetoresistive structure employed in the sensor of magnetic recording disc drive or tunnel junction magnetoresistive structure employed in the magnetic storage element of magnetic random access memory device.

Abstract: Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is formed of amorphous ZrxAl1-x (0<x<1) or ZrxAl1-xOy (0<x<1, 0<y<1). In a tunneling magnetoresistance (TMR) device, a tunneling barrier layer is formed of at least one selected from the group consisting of ZrxAl1-xOy (0<x<1, 0<y<1), TixAl1-xOy (0<x<1, 0<y<1), and NbxAl1-xOy (0<x<1, 0<y<1).

Abstract: Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is formed of amorphous ZrxAl1-x (0<x<1) or ZrxAl1-xOy (0<x<1, 0<y<1). In a tunneling magnetoresistance (TMR) device, a tunneling barrier layer is formed of at least one selected from the group consisting of ZrxAl1-xOy (0<x<1, 0<y<1), TixAl1-xOy (0<x<1, 0<y<1), and NbxAl1-xOy (0<x<1, 0<y<1).

Abstract: The present invention relates generally to the magnetic information storage technology, and particularly, to magnetic recording disc drives including a sensor having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure or magnetic random access memory device including a magnetic memory element(corresponding to a capacitor of DRAM) having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure. More particularly, the present invention relates to a spin valve magnetoresistive structure employed in the sensor of magnetic recording disc drive or tunnel junction magnetoresistive structure employed in the magnetic storage element of magnetic random access memory device.

Abstract: A spin valve type magnetoresistive element includes a substrate, an under layer deposited on the substrate, and a sensor portion arranged on the under layer. The under layer is formed of an amorphous CoNbZr alloy. The sensor portion includes a first ferromagnetic layer in which a magnetizing direction is changed by application of a magnetic field, a second ferromagnetic layer in which a magnetizing direction is fixed, a spacer layer which is non-magnetic and arranged between the first ferromagnetic layer and the second ferromagnetic layer, and an antiferromagnetic layer which is arranged to be adjacent to the second ferromagnetic layer to fix the magnetizing direction of the second ferromagnetic layer.

Abstract: A magnetic recording media for improving information storage density by adding Zr to a FePt film used in an information storage unit is provided. In the magnetic recording media including an information recording means for recording information and an information storage means for storing the information magnetically recorded by the information recording means, the information storage means includes a FePt magnetic layer containing Zr on the substrate. Thus, the use of a FePt—Zr film provides an information storage media having fast phase transformation a high coercivity and a fine grain size compared to the use of a FePt film.