Abstract: A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Abstract: A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; a plurality of front electrodes on the substrate at fixed intervals by each first separating part interposed in-between; a plurality of semiconductor layers on the front electrodes at fixed intervals by each contact part interposed in-between; and a plurality of rear electrodes connected with the front electrodes through the contact part, provided at fixed intervals by each second separating part interposed in-between, wherein a main isolating part is formed in the outermost front electrode, the outermost semiconductor layer, and the outermost rear electrode, wherein an auxiliary isolating part is formed in at least one of the outermost front electrode and the outermost rear electrode, wherein the auxiliary isolating part is positioned on the inside of the main isolating part.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.

Abstract: A chemical vapor deposition apparatus is disclosed, which is capable of improving the yield by an extension of a cleaning cycle, the chemical vapor deposition apparatus comprising a chamber with a substrate-supporting member for supporting a substrate; a chamber lid with plural first source supplying holes, the chamber lid installed over the chamber; plural source supplying pipes for supplying a process source to the plural first source supplying holes; a spraying-pipe supporting member with plural second source supplying holes corresponding to the plural first source supplying holes, the spraying-pipe supporting member detachably installed in the chamber lid; and plural source spraying pipes with plural third source supplying holes and plural source spraying holes, the plural source spraying pipes supported by the spraying-pipe supporting member, wherein the plural third source supplying holes are supplied with the process source through the plural second source supplying holes, and the plural source sprayin

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.

Abstract: A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.

Abstract: A chemical vapor deposition apparatus is disclosed, which is capable of improving the yield by an extension of a cleaning cycle, the chemical vapor deposition apparatus comprising a chamber with a substrate-supporting member for supporting a substrate; a chamber lid with plural first source supplying holes, the chamber lid installed over the chamber; plural source supplying pipes for supplying a process source to the plural first source supplying holes; a spraying-pipe supporting member with plural second source supplying holes corresponding to the plural first source supplying holes, the spraying-pipe supporting member detachably installed in the chamber lid; and plural source spraying pipes with plural third source supplying holes and plural source spraying holes, the plural source spraying pipes supported by the spraying-pipe supporting member, wherein the plural third source supplying holes are supplied with the process source through the plural second source supplying holes, and the plural source sprayin

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; a plurality of front electrodes on the substrate at fixed intervals by each first separating part interposed in-between; a plurality of semiconductor layers on the front electrodes at fixed intervals by each contact part interposed in-between; and a plurality of rear electrodes connected with the front electrodes through the contact part, provided at fixed intervals by each second separating part interposed in-between, wherein a main isolating part is formed in the outermost front electrode, the outermost semiconductor layer, and the outermost rear electrode, wherein an auxiliary isolating part is formed in at least one of the outermost front electrode and the outermost rear electrode, wherein the auxiliary isolating part is positioned on the inside of the main isolating part.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.