Patents by Inventor Seong-Seok Yang
Seong-Seok Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145913Abstract: The present disclosure relates to a phase shifter and a communication device including the same, and particularly, to a phase shifter including a base panel; a fixed substrate which is laminated and fixed on one side or another side on the base panel and has a plurality of circuit patterns printed on the top surface thereof; and a phase shift switching part provided with a plurality of movable substrates including movable strip terminal which are in contact with the plurality of circuit patterns of the fixed substrate, wherein the phase shift switching part is configured to reciprocate the plurality of movable substrates within a predetermined distance in a horizontal direction on the base panel to change the positions of contact points of the movable substrates with respect to the circuit patterns, wherein the phase shift switching part moves the plurality of movable substrates while elastically supporting the plurality of movable substrates toward the circuit patterns, thereby providing an advantage of maxiType: ApplicationFiled: January 7, 2024Publication date: May 2, 2024Applicant: KMW INC.Inventors: Sung Hwan SO, Oh Seog CHOI, Seong Man KANG, Hyoung Seok YANG, Yong Won SEO, Cha Gun GANG
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Patent number: 11962073Abstract: The present disclosure relates to an antenna apparatus for a base station and an adapter thereof and particularly comprises: an antenna module vertically installed to be spaced forward from a support pole by a predetermined distance so as to have a distancing space therebetween; an RRH installed on the antenna module to be positioned in the distancing space, wherein one of the upper end and the lower end thereof is hinge-coupled to the antenna module and the other of the upper end and the lower end thereof is attached to or detached from a part of the antenna module to enable electrical signal connection or disconnection while being rotated around the hinge; and an adapter for mediating the electrical signal connection and disconnection between the antenna module and the RRH. Therefore, the present disclosure provides advantages of reducing installation time and installation costs.Type: GrantFiled: January 27, 2021Date of Patent: April 16, 2024Assignee: KMW INC.Inventors: Seong Man Kang, Dae Myung Park, Hyoung Seok Yang, In Ho Kim, Kwang Seok Choi
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Patent number: 11908977Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: GrantFiled: March 1, 2022Date of Patent: February 20, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: JungSung Kim, Junghee Kwak, Seong Seok Yang
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Publication number: 20220190207Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: ApplicationFiled: March 1, 2022Publication date: June 16, 2022Inventors: JungSung KIM, Junghee KWAK, Seong Seok YANG
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Patent number: 11289626Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: GrantFiled: February 25, 2020Date of Patent: March 29, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: JungSung Kim, Junghee Kwak, Seong Seok Yang
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Patent number: 11069845Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.Type: GrantFiled: March 20, 2019Date of Patent: July 20, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-gu Ko, Jung-hee Kwak, Young-ho Ryoo, Seong-seok Yang, Sang-seok Lee, Seung-wan Chae
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Patent number: 10790415Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: GrantFiled: April 8, 2020Date of Patent: September 29, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: JungSung Kim, Junghee Kwak, Seong Seok Yang
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Publication number: 20200243722Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: ApplicationFiled: April 8, 2020Publication date: July 30, 2020Inventors: JungSung KIM, Junghee KWAK, Seong Seok YANG
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Publication number: 20200194630Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: ApplicationFiled: February 25, 2020Publication date: June 18, 2020Inventors: JungSung KIM, Junghee KWAK, Seong Seok YANG
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Patent number: 10580939Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: GrantFiled: September 28, 2017Date of Patent: March 3, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: JungSung Kim, Junghee Kwak, Seong Seok Yang
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Publication number: 20200006611Abstract: A light emitting device includes a substrate extending in a first direction and a second direction, first through fourth light emitting structures spaced apart from each other in the first and second direction and arranged in a matrix form on the substrate, a plurality of first interconnection layer structures connecting the first light emitting structure to the second light emitting structure, a second interconnection layer structure connecting the second light emitting structure to the third light emitting structure, and a plurality of third interconnection layer structures connecting the third light emitting structure to the fourth light emitting structure.Type: ApplicationFiled: March 20, 2019Publication date: January 2, 2020Inventors: Min-gu Ko, Jung-hee Kwak, Young-ho Ryoo, Seong-seok Yang, Sang-seok Lee, Seung-wan Chae
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Patent number: 10121939Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.Type: GrantFiled: June 19, 2017Date of Patent: November 6, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong-seok Yang, Jin-bock Lee, Jung-hee Kwak, Jung-kyu Park, Jung-sung Kim
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Publication number: 20180243544Abstract: A medical device can comprise: a piezoelectric element for generating ultrasonic waves; a transmission unit coming into contact with the piezoelectric element, and transmitting, to the skin, the ultrasonic waves and an electrical stimulation signal generated from the outside; and a guide having a ring shape having an inner surface and an outer surface, and coming into contact with one surface of the transmission unit in order to provide a functional material accommodation space. The functional material accommodation space can be defined by the inner surface of the guide and the one surface of the transmission unit. According to the present invention, a functional material accommodation space capable of maximizing the area in which a functional material and the skin make contact can be provided, and the configuration of a circuit for generating ultrasonic waves and the configuration of a circuit for generating an electrical stimulation signal can be simplified.Type: ApplicationFiled: August 17, 2016Publication date: August 30, 2018Inventor: Seong Seok YANG
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Publication number: 20180138372Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.Type: ApplicationFiled: September 28, 2017Publication date: May 17, 2018Inventors: JungSung KIM, Junghee KWAK, Seong Seok YANG
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Publication number: 20170365745Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.Type: ApplicationFiled: June 19, 2017Publication date: December 21, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Seong-seok YANG, Jin-bock LEE, Jung-hee KWAK, Jung-kyu PARK, Jung-sung KIM
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Publication number: 20160163925Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, microstructures regularly arranged on the first conductivity-type semiconductor layer around the light-emitting structure, and a gradient refractive layer on at least a portion of the microstructures, the gradient refractive layer having a lower refractive index than the first conductivity-type semiconductor layer.Type: ApplicationFiled: December 3, 2015Publication date: June 9, 2016Inventors: Su Hyun Jo, Ki Seok Kim, Seong Seok Yang, Yong Il Kim, Seung Hwan Lee
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Patent number: 9076928Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.Type: GrantFiled: May 30, 2013Date of Patent: July 7, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong Seok Yang, Ki Seok Kim, Je Won Kim, Ju Bin Seo, Sang Seok Lee, Joon Sub Lee, Jin Bock Lee
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Patent number: 8946751Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.Type: GrantFiled: August 30, 2013Date of Patent: February 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Bock Lee, Ki Seok Kim, Je Won Kim, Ju-Bin Seo, Seong Seok Yang, Sang Seok Lee, Joon Sub Lee
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Publication number: 20140070252Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.Type: ApplicationFiled: August 30, 2013Publication date: March 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: JIN BOCK LEE, Ki Seok Kim, Je Won Kim, Ju-Bin Seo, Seong-Seok Yang, Sang Seok Lee, Joon Sub Lee
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Publication number: 20140045288Abstract: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.Type: ApplicationFiled: August 13, 2013Publication date: February 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Seok KIM, Je Won KIM, Ju Bin SEO, Seong Seok YANG, Sang Seok LEE, Joon Sub LEE, Jin Bock LEE