Abstract: Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.

Abstract: Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.

Abstract: Disclosed is a method for manufacturing pixel electrode of liquid crystal display, comprising the steps of: providing a transparent insulating substrate where thin film transistors having a signal electrode are arranged; coating a first organic insulating layer over the transparent insulating substrate to cover the signal electrode; hardening the first organic insulating layer; forming a first contact hole to expose the signal electrode in the first organic insulating layer; forming a first pixel electrode being in contact with the signal electrode through the first contact hole over the first organic insulating layer; coating a second organic insulating layer over the first organic insulating layer including the first pixel electrode; hardening the second organic insulating layer; forming a second contact hole to expose the first pixel electrode in the second organic insulating layer; and forming a second pixel electrode being in contact with the first pixel electrode over the first organic insulating layer.

Abstract: A method of manufacturing a TFT-LCD which can prevent damage due to a mask process and reduce cost by minimizing mask process number, is disclosed. A three-mask process is required for fabricating a TFT-LCD in the present invention. Firstly, on a transparent insulating substrate are formed a semiconductor layer, a doped semiconductor layer and a first metal layer, sequentially. The first metal layer is then etched using a first mask, to form source and drain electrodes spaced to a selected distance. Next, the doped semiconductor layer is etched using the source and drain electrodes as an etch mask, to form ohmic layers under the source and drain electrodes. A gate insulating layer and a second metal layer are then formed on the overall substrate, in sequence. Thereafter, the second metal layer is etched using a second mask, to form a gate electrode overlapped with the insides of the source and drain electrodes.