Abstract: An electronic device is provided. The electronic device includes a camera module, a sensor module, at least one processor configured to be operatively connected to the camera module and the sensor module, and a memory configured to be operatively connected to the at least one processor.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.

Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.

Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.

Abstract: Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region.