Patents by Inventor Seong-tae Oh

Seong-tae Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230264963
    Abstract: A method for fabricating trihalodisilane, the method includes providing a halodisilane including at least four halogen atoms; reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1, in which RA is an alkyl group, and m and n are each independently 1 or 2, and m+n=3, and a second reducing agent represented by following Chemical Formula 2-1, in which RS is an alkyl group or an aryl group, p and q are each independently 1, 2, or 3, and p+q=4; and obtaining a product including a 1,1,1-trihalodisilane, (RA)m—Al—Hn??[Chemical Formula 1-1] (RS)p—Sn—Hq.
    Type: Application
    Filed: January 24, 2023
    Publication date: August 24, 2023
    Applicant: WONIK Materials Co., Ltd.
    Inventors: Ji Eun YUN, Byung Keun HWANG, Min Soo KANG, Sheby Mary GEORGE, Woo Ri BAE, Sun Hye HWANG, Seong Tae OH, Byeong Ok CHO
  • Patent number: 6579794
    Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: June 17, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-tae Oh, Kyung-tae Kim, Hong-Joo Baek, Hun-ki Kim
  • Patent number: 6404054
    Abstract: A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.
    Type: Grant
    Filed: July 5, 2000
    Date of Patent: June 11, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-tae Oh, Kyung-tae Kim, Hong-Joo Baek, Hun-ki Kim